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Designing with Silicon Carbide (SiC) for Electric Vehicle DC Fast Chargers.
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Gate Driver Board for 3rd Generation (C3M™) Silicon Carbide MOSFETs
CGD15SG00D2
Features:
- Supports 900V and 1200V (C3M™) Silicon Carbide MOSFETs
- Gate driver output voltage = +15 V (max) / -3.3 V (min)
- Integrated isolated power supply
- High Creepage (9mm) clearance
- Resistor network allows user friendly optimization of gate signals
- Full reference design files available for download
- Available for purchase
Documents, Tools, & Support
- Technical & Sales Documents
- Tools & Support
Documents
Document Type | Document Name | Last Updated |
|---|---|---|
| Application Notes | 01/2023 | |
| User Guide | 01/2024 |
Knowledge Center
Designing with Top Side Cooled (TSC) Silicon Carbide Power Devices
Improve thermal management and conserve power with Wolfspeed’s New TSC MOSFETs and Schottky diodes.
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The Silicon Carbide Landscape and Advantage
Wolfspeed’s silicon carbide expert Guy Moxey kicks of Wolfspeed’s 2024 Designer’s Guide by exploring the proliferation of silicon carbide across applications, including electric vehicles, industrial motor drives and e-mobility, and ways Wolfspeed is meeting growing global demand.
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