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Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.

CPM3-1200-0021A

1200 V, 21 mΩ, Gen 3, Industrial qualified, Bare Die SiC MOSFET

Parametric Data

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1200 V Bare Die Silicon Carbide MOSFETs – Gen 3

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1200 V Bare Die Silicon Carbide MOSFETs – Gen 3

Product SKU
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Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Tjmax
Generation
CPM3-1200-0021A
Active
1200 V
21 mΩ
100 A
162 nC
180 pF
928 nC
34 ns
175 °C
Gen 3

Ordering & Compliance

CPM3-1200-0021A Ordering

Part NumberCPM3-1200-0021A
Order StatusActive
Buy Online
Container TypeAvailable in Film Frame and Tape & Reel

CPM3-1200-0021A Compliance

Halogen FreeYes
Lead FreeYes
RoHS Declaration
REACH Declaration
California Prop 65Learn More
ECCNEAR99

Product Details

Features
  • High blocking voltage with industry leading low RDS(on) over temperature stability
  • Fast intrinsic diode with low reverse recovery charge (Qrr)
  • High-speed switching with low output capacitance
  • Low conduction losses over temperature
  • Avalanche ruggedness
Benefits
  • Improves system efficiency with lower switching loss
  • Reduces system size; weight; and cooling requirements
  • Increased power density
  • Easy to parallel and compatible with standard gate drive design
Typical Applications
  • Solid State Circuit Breakers
  • Renewable Energy Inverters
  • High voltage DC/DC converters
  • Switch-Mode Power Supplies
  • Uninterruptible Power Supplies (UPS)
  • High Performance Welding Power Supplies
  • Auxiliary power supplies for High Voltage Systems

Documents, Tools & Support

Display All SKUs in Product Family (6)

Documents

Document Type
Document Name
Last Updated
Data Sheets
07/2024
Application Notes
11/2023
Application Notes
01/2023
Application Notes
11/2021
Sales Terms
12/2021

Knowledge Center

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