Wolfspeed's Gen 5 SiC MOSFETs are engineered for real-world performance — not just ideal conditions. Built on optimized planar MOSFET design, Gen 5 achieves better RDS(ON) through tightened epitaxy, increased active area, and enhanced soft body diode technology. The result: lower losses, higher reliability, and greater design confidence for automotive and industrial applications.
1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 4
Wolfspeed's family of Automotive Qualified 1200 V, Gen 4 SiC Bare Die MOSFETs
This is Wolfspeed’s 4th generation of high-performance silicon carbide MOSFET in a package less bare die format to be implemented into any custom module design. The high blocking voltage with low on-resistance, high-speed switching with low capacitance makes this MOSFET ideal for applications in automotive drivetrain and motor drives.
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Product SKU | Buy Online | Data Sheet | Status | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Tjmax | Generation | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Active | 1200 V | 9.6 mΩ | 202 A | 317 nC | 259 pF | 2184 nC | 45 ns | 185 °C | Gen 4 | Automotive | |||
Active | 1200 V | 11.6 mΩ | 166 A | 260 nC | 220 pF | 700 nC | 31 ns | 185 °C | Gen 4 | Automotive | |||
Active | 1200 V | 12.5 mΩ | 159 A | 242 nC | 206 pF | 1180 nC | 40 ns | 185 °C | Gen 4 | Automotive | |||
Active | 1200 V | 13 mΩ | 149 A | 234 nC | 210 pF | 1133 nC | 33 ns | 185 °C | Gen 4 | Automotive |
Knowledge Center
As AI scales, a greater lens is on the upstream power sources that are expected to keep up with rapidly expanding data center deployments. Amperesand is helping build the cornerstone of tomorrow’s grid by developing highly reliable, medium voltage (MV) SiC-based solid state transformers. Read more to learn how Amperesand and Wolfspeed partnered to make it happen.