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1200 V Bare Die SiC MOSFETs – Gen 2

Wolfspeed's Gen 2 family of 1200 V silicon carbide (Sic) MOSFETs are optimized for use in high power applications
Note Last Time Buy.

Parametric Data

1200 V Bare Die SiC MOSFETs – Gen 2

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1200 V Bare Die SiC MOSFETs – Gen 2

Product SKU
Buy Online
Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Tjmax
Generation
Qualification
CPM2-1200-0025A
Last Time Buy
1200 V
25 mΩ
81 A
161 nC
235 pF
406 nC
45 ns
175 °C
Gen 2
Industrial
Last Time Buy
1200 V
40 mΩ
60 A
131 nC
157 pF
964 nC
63 ns
175 °C
Gen 2
Industrial
Last Time Buy
1200 V
80 mΩ
36 A
71 nC
92 pF
152 nC
24 ns
175 °C
Gen 2
Industrial
Last Time Buy
1200 V
160 mΩ
18 A
40 nC
55 pF
192 nC
20 ns
175 °C
Gen 2
Industrial

Product Details

Features
  • Robust intrinsic diode with low reverse recovery charge (Qrr)
  • High-speed switching with low output capacitance
  • Low conduction losses over temperature
  • Avalanche ruggedness
Benefits
  • Improves system efficiency with lower switching loss
  • Reduces system size; weight; and cooling requirements
  • Increased power density
Typical Applications
  • Renewable energy Inverters
  • High voltage DC/DC converters
  • Switch Mode Power Supplies

Tools & Support

Documents

Document Type
Document Name
Last Updated
Application Notes
11/2023
Application Notes
01/2023
Application Notes
11/2021
Product Catalog
05/2024
Sales Terms
12/2021

Knowledge Center

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Industrial E-Mobility

Driving Industrial E-Mobility With Silicon Carbide Semiconductors

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