Renewable Energy

Residential & Light Commercial Solar Systems

Wolfspeed silicon carbide is enabling smaller, lighter and more affordable residential solar systems

Silicon Carbide powering homes across the globe

Every home’s energy needs are unique. Wolfspeed’s Silicon Carbide devices are making it possible to build smaller, more efficient and power dense residential solar energy system, meaning clean energy is now more affordable, reliable and resilient than ever, all while meeting emerging efficiency standards.

Graphic showing string and micro inverter solar systems with photo and two dimensional examples

Wolfspeed’s 650 V discrete Silicon Carbide MOSFETs & diodes feature the industry’s lowest on-state resistances and switching losses for maximum efficiency and power density.

Composite image of the four 650V packages used for Wolfspeed's Discrete Silicon Carbide MOSFETs — Wolfspeed’s 650 V discrete Silicon Carbide MOSFETs & diodes feature the industry’s lowest on-state resistances and switching losses for maximum efficiency and power density.

Micro and Single-Phase Inverters

Solar inverters are an integral part of the residential solar system, converting DC current generated by the photovoltaic panel to grid-ready AC. Micro inverters are used in residential settings, converting power for 1-4 solar panels in systems that are < 7 kW. Single-phase string inverters connect larger solar arrays of 5-50 panels in systems that are 5-15 kW and are well suited to larger residential and light commercial applications.

Using Wolfspeed silicon carbide MOSFETs in residential solar inverters creates increased power density and lower switching losses. For example, replacing traditional IGBTs with Wolfspeed’s 650 V MOSFETs in a 7 kW residential single-phase inverter achieves 0.4% higher efficiency, a significant increase in power density (3 kW/L vs. 2.5 kW/L) and an impressive 48 kHz switching frequency, a full 32 kHz higher than using silicon. Wolfspeed’s C3M0045056K MOSFET is a key switch for single-phase systems offering a leading On Resistance over temperature performance and up to 30% less peak reverse recovery current.

Wolfspeed’s 60 kW Interleaved Boost Converter reference design demonstrates Wolfspeed’s C3M™ Silicon Carbide MOSFETs in a 4-phase interleaved boost converter.

Product Shot of Wolfspeed's Reference Design of a 60 kW Interleaved Boost Converter — Wolfspeed’s 60 kW Interleaved Boost Converter reference design demonstrates Wolfspeed’s C3M™ Silicon Carbide MOSFETs in a 4-phase interleaved boost converter.

String Inverters for Residential/Light Commercial Systems

Using MPPT Boost Converters in residential and light commercial solar arrays takes the variable voltages produced between panels and generates a consistent, higher voltage to the internal bus. Silicon Carbide Schottky diodes are a proven cost-effective way to maximize MPPT boost circuit performance. Adding Silicon Carbide MOSFETs can provide additional efficiency in even the most challenging designs. Combining 650 V silicon carbide MOSFETs with 650 V Schottky Diodes can further boost efficiency to 1.8% in a 7 kW residential system block with zero design changes.

Improved Reliability, Cleaner Power from Wolfspeed SiC

Wolfspeed Silicon Carbide is uniquely capable of incredible reliability and efficiency, even in the most demanding power applications. That’s because Wolfspeed Silicon Carbide offers:

Up To

30%

Lower Losses

Up To

50%

Higher Power Density

Up To

10%

System Cost Savings

Wolfspeed SiC Components for Solar Energy Systems

Residential and light commercial solar energy systems harness the power of the sun to power homes and small businesses. Using Wolfspeed Silicon Carbide in these systems greatly improves energy efficiency, reduces switching losses and meets emerging efficiency standards.

650 V Discrete Silicon Carbide MOSFETs

Wolfspeed’s family of 650 V SiC MOSFETs offer the industry’s lowest on-state resistances and switching losses for maximum efficiency and power density.

650 V Discrete Silicon Carbide Schottky Diodes

Wolfspeed’s 650 V Discrete SiC Schottky Diode technology is optimized for high-performance power electronics applications.

This reference design is ideal for scaling up power levels by interleaving multiple 25 kW AFE’s. C3M MOSFETs enable high switching frequencies.

Block Diagrams

This T-type topology for a 800 V system utilizes 1200 V MOSFETs in series or 1200 V half-bridge power modules coupled with 650V or 750 V MOSFETs to achieve reduced overall system losses.

Silicon Carbide MOSFETs
1200 V Discrete Silicon Carbide MOSFETs
Wolfspeed’s 1200 V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes.

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C3M 650V/750V Series for Side Switch
650 V Discrete Silicon Carbide MOSFETs
Our Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability.

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750 V Discrete Silicon Carbide MOSFETs
Wolfspeed Silicon Carbide (SiC) MOSFETs enable higher switching frequencies and reduce the size of components like inductors, capacitors, filters & transformers.

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Silicon Carbide Power Modules
Wolfspeed WolfPACK™ 1200 V Half-Bridge Family
Wolfspeed WolfPACK™ modules are a great choice for designers who want to increase efficiency and power density in a compact, industry standard footprint.

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Wolfspeed WolfPACK™ 1200 V T-Type Modules
Wolfspeed WolfPACK™ modules are a great choice for designers who want to increase efficiency and power density in a compact, industry standard footprint.

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Micro string inverters in systems < 7 kW are easily distributed for high up-time and low cost of maintenance while providing power conversion for 1-4 PV panels at a time.

Silicon Carbide MOSFETs
650/750 V C3M Series
Our Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability.

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Silicon Carbide Schottky Diodes
1200 V Discrete Schottky Diodes
Wolfspeed’s 1200 V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes.

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Three-phase microinverters in solar PV systems increase energy efficiency and provide higher output power capability than single phase systems.

Silicon Carbide MOSFETs
1200 V C3M Series
Our Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability.

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Silicon Carbide Schottky Diodes
1200 V Discrete Schottky Diodes
Wolfspeed’s 1200 V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes.

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Using an H6 converter with a hybrid SiC and IGBT solution enhances efficiency, improves thermal performance and ruggedness, and enables more compact and cost-effective designs.

Silicon Carbide MOSFETs
650V/750V C3M Series
Wolfspeed Silicon Carbide (SiC) MOSFETs enable higher switching frequencies and reduce the size of components like inductors, capacitors, filters & transformers.

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Silicon Carbide Schottky Diodes
650 V C6D Series
Wolfspeed’s 650 V Silicon Carbide (SiC) Schottky diode technology is optimized for high-performance power electronics applications including server power supplies, electric vehicle EV fast charging systems, energy storage systems, solar (PV) inverters, consumer electronics, and more.

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This simplified boost converter couples 650 V or 750 V MOSFETs for single-phase system or 1200 V MOSFETs for three-phase systems with complimentary diodes for a complete silicon carbide boost converter solution.

Silicon Carbide Schottky Diodes
C6D 650 V Series for Single-Phase
Wolfspeed’s 650 V Silicon Carbide (SiC) Schottky diode technology is optimized for high-performance power electronics applications including server power supplies, electric vehicle EV fast charging systems, energy storage systems, solar (PV) inverters, consumer electronics, and more.

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C4D 1200 V for Three-Phase
Wolfspeed has the broadest portfolio of Silicon Carbide (SiC) Schottky diodes, with more than twelve trillion field hours, lowest FIT rate, and 30+ years of experience in Silicon Carbide, combined with the fastest delivery times.

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Silicon Carbide MOSFETs
C3M 650/750 V Series for Single Phase
Our Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability.

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1200 V Series for Three-Phase
Our Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability.

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This 2-level, three-phase inverter provides a simplified power topology for minimal component count.

Silicon Carbide Power Modules
Wolfpack 1.2KV Half Bridge Modules for 1000 V System
Wolfspeed WolfPACK™ modules are a great choice for designers who want to increase efficiency and power density in a compact, industry standard footprint.

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Wolfpack 1.2KV Six-Pack Modules for 1000 V System
Wolfspeed WolfPACK™ modules are a great choice for designers who want to increase efficiency and power density in a compact, industry standard footprint.

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Silicon Carbide MOSFETs
C3M 1200 V Series for Three-Phase
Wolfspeed Silicon Carbide (SiC) MOSFETs enable higher switching frequencies and reduce the size of components like inductors, capacitors, filters & transformers.

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A three-phase Active Neutral Point Clamped topology provides high efficiency and improved harmonics for a 1500V bus system.

Silicon Carbide Power Modules
Wolfpack 1.2KV Half Bridge Modules for 1500V System
Silicon Carbide Implementation Made Simple, Compact, Reliable

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Silicon Carbide MOSFETs
C3M 1200 V Series for 1500 V System
Our Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability.

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C3M 650/750V Series for 1000V System
Our Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability.

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