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    Renewable Energy

    Energy Storage Systems

    Wolfspeed Silicon Carbide is capable of incredible reliability and efficiency within battery-based energy storage systems, meaning power is always available even when the sun sets.

    • Overview
    • Block Diagrams
    • Products
    • Knowledge Center
    • Overview
    • Block Diagrams
    • Products
    • Knowledge Center

    Energy Storage Systems Enable a Secure Energy Future

    One of the biggest challenges facing the renewable industry is how to manage supply vs demand, as power generated by solar and wind systems can fluctuate considerably depending on environmental conditions and time of day. Battery-based Energy Storage Systems (ESS) are one way that system designers can address this challenge and create a reliable energy infrastructure at the residential, commercial, industrial and utility levels.

    Wolfspeed Silicon Carbide MOSFETs, Schottky diodes and power modules are the gold-standard for energy storage systems, creating systems that are more efficient and power dense, have simpler circuit topologies that reduce overall cost and size, all while meeting emerging efficiency standards.

    Illustrated diagram showing how solar panels are used to charge power grids, EV chargers, industrial and residential applications.

    Close up product image of the Wolfspeed WolfPACK™ power modules
    Wolfspeed WolfPACK™ Silicon Carbide Power Modules provide an excellent solution for fast design implementation, scalability, and lower assembly overhead.

    Residential and Commercial Energy Storage Solutions

    Solar photovoltaic and wind energy storage systems have multiple power stages that can benefit from Wolfspeed Silicon Carbide MOSFETs, Schottky diodes and power modules, including the Wolfspeed WolfPACK™ family of devices. Whether it is a single-phase residential system (5-15 kW) ore three-phase commercial system (30-100 kW), the architecture and power circuit topologies are similar and can be scaled according to power level.

    At the residential and commercial level, energy storage systems save excess power generated during peak times for the building it is tied to. Using Wolfspeed Silicon Carbide in a residential or light commercial buck/boost battery interface circuit can improve charge and discharge efficiency while reducing system cost and size.


    Three 1200V SiC MOSFETs arranged in a horizontal row.
    Wolfspeed offers the broadest portfolio of 1200 V SiC MOSFETs in the industry. These MOSFETs are optimized for use in high power applications and based on 3rd generation technology.

    Utility-Scale Energy Storage Solutions

    Larger industrial and utility-scale energy storage systems utilize massive battery storage systems that operate before the meter, storing enough power for large factories or entire utility grids. These large-scale ESS can also benefit from Wolfspeed Silicon Carbide in the buck/boost circuit. Currently, using Wolfspeed’s 1200 V MOSFETs and Schottky diodes in a three-level configuration or WolfPACK™ Six-Pack Modules provides an ideal combination of efficiency and ease of design along with the highest system power density. New 1500 V photovoltaic solar systems are delivering higher voltage to energy storage systems.


    Accelerate your solar system design process with SpeedFit™ Design Simulator

    Watch as Wolfspeed's Zan Huang demonstrates using the SpeedFit™ Design Simulator to simulate a solar MPPT Boost Converter and see how you can achieve high efficiency and power density in solar systems even under elevated temperatures.

    When You Need Power You Can Rely on, Choose Wolfspeed

    Alternative energy systems are an alternative only when they can be counted on, which is why Wolfspeed is a great choice. Wolfspeed SiC’s robust performance has proven its value time and again, with billions of field hours for our most popular SiC components.

    Up To
    30%
    Lower Losses
    Up To
    50%
    Higher Power Density
    Up To
    15%
    System Cost Savings

    Block Diagrams

    • This T-type topology for a 800 V system utilizes 1200 V MOSFETs in series or 1200 V half-bridge power modules coupled with 650V or 750 V MOSFETs to achieve reduced overall system losses.

      Power Solar T Type inverter

      Silicon Carbide MOSFETs

      1200 V Discrete Silicon Carbide MOSFETs

      Wolfspeed’s 1200 V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes.

      Composite image of the three 1200V packages used for Wolfspeed's Discrete Silicon Carbide MOSFETs
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      C3M 650V/750V Series for Side Switch

      650 V Discrete Silicon Carbide MOSFETs

      Our Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability.

      Composite image of the four 650V packages used for Wolfspeed's Discrete Silicon Carbide MOSFETs
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      750 V Discrete Silicon Carbide MOSFETs

      Wolfspeed Silicon Carbide (SiC) MOSFETs enable higher switching frequencies and reduce the size of components like inductors, capacitors, filters & transformers.

      Composite image of the front and back sides of a Wolfspeed discrete Silicon Carbide (SiC) MOSFET in a TO-247-4 LP package
      View Products

      Silicon Carbide Power Modules

      Wolfspeed WolfPACK™ 1200 V Half-Bridge Family

      Wolfspeed WolfPACK™ modules are a great choice for designers who want to increase efficiency and power density in a compact, industry standard footprint.

      Product shots of the WolfPACK SiC Power Modules in the FM3 & GM3 packages.
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      Wolfspeed WolfPACK™ 1200 V T-Type Modules

      Wolfspeed WolfPACK™ modules are a great choice for designers who want to increase efficiency and power density in a compact, industry standard footprint.

      Product shots of the WolfPACK SiC Power Modules in the FM3 & GM3 packages.
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    • Innovative 2300 V modules utilize 200 mm silicon carbide technology to enable simplified system architectures, while providing industry-leading switching performance, improved device and system durability.

      Six-Switches-2-level-inverter

      Silicon Carbide Power Modules

      Wolfpack 2.3 KV Half Bridge Modules for 1500 V System

      Wolfspeed WolfPACK™ modules are a great choice for designers who want to increase efficiency and power density in a compact, industry standard footprint.

      Wolfspeed WolfPACK™ 2.3 kV Silicon Carbide power module GM4 & GM4T package
      View the Products

      3300 V LM Silicon Carbide Half-Bridge Power Modules

      Wolfspeed WolfPACK™ modules are a great choice for designers who want to increase efficiency and power density in a compact, industry standard footprint.

      Wolfspeed WolfPACK Baseplate-Less SiC Power Module
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      Silicon Carbide MOSFETs

      C3M 1200V Series for 950 V/1000 V system

      Our Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability.

      Composite image of the front and back sides of a Wolfspeed discrete Silicon Carbide (SiC) MOSFET in a TO-247-4 LP package
      View the Products
    • This approach uses 650 V or 750 V MOSFETs for single-phase systems and 1200 V MOSFETs for three-phase systems for improved battery charging.

      Bi-directional-DC-DC-Battery-48v-Charger

      Silicon Carbide MOSFETs

      650V/750V C3M Series for Single Phase

      Our Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability.

      Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
      View the Products

      1200V Series for Three Phases

      Our Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability.

      Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
      View the Products
    • This simplified boost converter couples 650 V or 750 V MOSFETs for single-phase system or 1200 V MOSFETs for three-phase systems with complimentary diodes for a complete silicon carbide boost converter solution

      2-level-Boost-Converter

      Silicon Carbide Schottky Diodes

      C6D 650 V Series for Single-Phase

      Wolfspeed’s 650 V Silicon Carbide (SiC) Schottky diode technology is optimized for high-performance power electronics applications including server power supplies, electric vehicle EV fast charging systems, energy storage systems, solar (PV) inverters, consumer electronics, and more.

      View the Products

      C4D 1200 V for Three-Phase

      Wolfspeed has the broadest portfolio of Silicon Carbide (SiC) Schottky diodes, with more than twelve trillion field hours, lowest FIT rate, and 30+ years of experience in Silicon Carbide, combined with the fastest delivery times.

      Image that includes both the front and back of the TO-252-2 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
      View the Products

      Silicon Carbide MOSFETs

      C3M 650/750 V Series for Single Phase

      Our Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability.

      Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
      View the Products

      1200 V Series for Three-Phase

      Our Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability.

      Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
      View the Products
    • This 2-level, three-phase inverter provides a simplified power topology for minimal component count.

      2-level-three-phase-inverter-renewable-energy

      Silicon Carbide Power Modules

      Wolfpack 1.2KV Half Bridge Modules for 1000 V System

      Wolfspeed WolfPACK™ modules are a great choice for designers who want to increase efficiency and power density in a compact, industry standard footprint.

      Product image of the Wolfspeed Wolfpack SiC Power Module in the FM3 package.
      View the Products

      Wolfpack 1.2KV Six-Pack Modules for 1000 V System

      Wolfspeed WolfPACK™ modules are a great choice for designers who want to increase efficiency and power density in a compact, industry standard footprint.

      Product image of the Wolfspeed Wolfpack SiC Power Module in the FM3 package.
      View the Products

      Silicon Carbide MOSFETs

      C3M 1200 V Series for Three-Phase

      Wolfspeed Silicon Carbide (SiC) MOSFETs enable higher switching frequencies and reduce the size of components like inductors, capacitors, filters & transformers.

      Composite image of the front and back sides of a Wolfspeed discrete Silicon Carbide (SiC) MOSFET in a TO-247-4 LP package
      View the Products

    Featured Products

    1200 V Discrete Silicon Carbide Schottky Diodes
    Wolfspeed’s 1200 V Discrete SiC Schottky Diodes feature the MPS (Merged PiN Schottky) design, which is more robust and reliable.
    650 V Discrete Silicon Carbide MOSFETs
    Wolfspeed’s 650 V MOSFETs in a TO-Leadless package enable high efficiency and high power density.
    Product Shot of Wolfspeed's Reference Design of a 60 kW Interleaved Boost Converter
    60 kW Interleaved Boost Converter
    Wolfspeed’s 60 kW Interleaved Boost Converter reference design demonstrates Wolfspeed’s C3M™ SiC MOSFETs in a 4-phase interleaved boost converter.
    1200 V Discrete Silicon Carbide MOSFETs
    Wolfspeed’s family of 1200 V Silicon Carbide MOSFETs are optimized for use in high power applications and features a wide variety of on-resistances and package options.
    1200 V Discrete Silicon Carbide Schottky Diodes
    Wolfspeed’s 1200 V Discrete SiC Schottky Diodes feature the MPS (Merged PiN Schottky) design, which is more robust and reliable.
    650 V Discrete Silicon Carbide MOSFETs
    Wolfspeed’s 650 V MOSFETs in a TO-Leadless package enable high efficiency and high power density.
    Product Shot of Wolfspeed's Reference Design of a 60 kW Interleaved Boost Converter
    60 kW Interleaved Boost Converter
    Wolfspeed’s 60 kW Interleaved Boost Converter reference design demonstrates Wolfspeed’s C3M™ SiC MOSFETs in a 4-phase interleaved boost converter.
    1200 V Discrete Silicon Carbide MOSFETs
    Wolfspeed’s family of 1200 V Silicon Carbide MOSFETs are optimized for use in high power applications and features a wide variety of on-resistances and package options.
    1200 V Discrete Silicon Carbide Schottky Diodes
    Wolfspeed’s 1200 V Discrete SiC Schottky Diodes feature the MPS (Merged PiN Schottky) design, which is more robust and reliable.
    650 V Discrete Silicon Carbide MOSFETs
    Wolfspeed’s 650 V MOSFETs in a TO-Leadless package enable high efficiency and high power density.

    Knowledge Center

    View All

    Maximizing Performance of 1500 V DC Bus Applications with the 2300 V SiC Modules

    View Now  Webinars

    Reimagine Auxiliary Power Supply System Durability & Cost with Wolfspeed’s New 1700 V MOSFET Technology

    Continue Reading  Technical Articles

    Revolutionizing Power Electronics with Silicon Carbide to Pioneer Sustainable Solutions

    Continue Reading  White Paper

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