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    SiC Materials

    Materials Products

    Delivering quality at scale

    As a pioneer in silicon carbide, we are leading the industry’s transition to the 200mm n-type wafers with an intense focus on continuous improvement, unwavering quality and cost reduction. Grounded in our years of experience, our passion and the best technology, we deliver n-type conductive SiC products and a variety of SiC epitaxy options at scale necessary to meet growing demand for higher-performing, more efficient silicon carbide solutions.

    Wolfspeed continues to achieve breakthroughs in SiC technology, demonstrating 300 mm Silicon Carbide Wafers. For more information, please .

    We believe in a better, more sustainable future. Together, with the world's leading electronics manufacturers we can make that future real today.


    Products

    SiC for Power Electronics

    Conductive SiC Substrates and SiC Epitaxy

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    GaN on SiC for RF Devices

    Semi-insulating SiC Substrates and GaN Epitaxy

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    Physical Properties

    Polytype
    Single-Crystal 4H
    Supported diameters
    150mm & 200mm
    Crystal structure
    Hexagonal
    Bandgap
    3.26 eV
    Thermal conductivity (n-type; 0.020 Ω*cm)
    a~4.2 W/cm • K @ 298 K
    c~3.7 W/cm • K @ 298 K
    Thermal conductivity (HPSI)
    a~4.9 W/cm • K @ 298 K
    c~3.9 W/cm • K @ 298 K
    Lattice parameters
    a=3.073 Å
    c=10.053 Å
    Mohs hardness
    9

    Dimensional Properties, Terminology, & Methods

    Diameter
    The linear dimension across the surface of the wafer. Measurement is performed using an automated micrometer, traceable to the ANSI standard, providing the average value for each individual wafer.
    Thickness, Center Point
    Measured with ANSI-certified non-contact tools at the center of each individual wafer.
    Surface Orientation
    Denotes the orientation of the surface of a wafer with respect to a crystallographic plane within the lattice structure. In wafers cut intentionally “off orientation,” the direction of cut is parallel to the primary flat, away from the secondary flat. Measured with x-ray goniometer on a sample of one wafer per boule in the center of the wafer.
    Orthogonal Misorientation
    In wafers intentionally cut “off orientation,” the angle between the projection of the surface normal onto a (0001) plane and the nearest [1120] direction.

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    Knowledge Center

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    Beyond Silicon’s Limits:
    How High‑Voltage Silicon Carbide is Redefining Critical Power

    Continue Reading  Thought Leadership

    Wolfspeed’s 300 mm Silicon Carbide Technology as a Materials Foundation for Next-Generation AI and HPC Advanced Packaging

    Continue Reading  Technical Articles

    Answering the call:
    Powering AI with reliable silicon carbide-based solid-state transformers

    Continue Reading  White Paper

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