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3300 V Bare Die Silicon Carbide MOSFETs

Wolfspeed CPM3-3300-R050A Silicon Carbide MOSFET Gen 3
Wolfspeed's 3300 V bare die silicon carbide MOSFETs offer high reliability and ruggedness for high power applications.
Technical Support Forum
The MOSFETs enable greater system efficiency and smaller, more power dense systems optimized for use in heavy duty equipment, industrial uninterruptible power supply (UPS) systems, industrial motor drives, and more.

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3300 V Bare Die Silicon Carbide MOSFETs

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3300 V Bare Die Silicon Carbide MOSFETs

Product SKU
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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
CPM3-3300-R050A
3300 V
53 mΩ
52 A
255 nC
140 pF
2.5 nC
124 ns
175 °C
Gen 3

Product Details

Features
  • Low RDS(on)
  • Avalanche Ruggedness
  • Easy to Parallel and Simple to Drive
  • Temperature-Independent High-Speed Switching
Benefits
  • Increased switching speed and efficiency compared to Si IGBTs
  • Intrinsic body diode reduces BOM components
  • High temperature operation, -55º C to 175º C
  • Enhanced reliability
Applications
  • Heavy-duty industrial e-mobility (transportation, construction, agricultural, mining, and logging vehicles)
  • Ultra-fast DC chargers
  • Industrial motor drives
  • Industrial uninterruptible power supply (UPS) systems
  • Marine & aerospace propulsion
  • Terrestrial power distribution systems
  • High voltage direct current (HVDC) and flexible AC transmission system (FACTS) controllers

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
Data Sheets
04/2023
Application Notes
11/2023
Application Notes
01/2023
Application Notes
11/2021
Sales Sheets & Flyers
06/2024
Sales Terms
12/2021
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