Features
- Low RDS(ON)
- AlSiC baseplate
- High thermal conductivity AMB SiN substrates (90 W/m·K at 25 C)
- Exemplary thermal-mechanical cycling performance
- Low stray Inductance (10 nH)
The 3300 V modules are designed for low RDS(ON), are easy to parallel and compatible with standard gate driver design. At a system level, moving from a silicon to a silicon carbide module solution can help enable smaller, lighter, and more cost-effective designs.
Product SKU | Data Sheet | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Maximum Junction Temperature | Module Size | Status | Qualification | View Product |
---|---|---|---|---|---|---|---|---|---|---|---|---|
LM | Half-Bridge | 3300 V | 770 A | 2.7 mΩ | Gen 3 | 175 °C | 100 x 144 x 40 mm | Active | Industrial |
Document Type | Document Name | Last Updated |
---|---|---|
Application Notes | 03/2024 | |
Application Notes | 01/2024 | |
Application Notes | 11/2023 | |
Application Notes | 08/2023 | |
Application Notes | 01/2023 | |
Product Catalog | 05/2024 | |
Sales Sheets & Flyers | 06/2024 | |
Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
| 04/2024 |
Sales Terms | 12/2021 |