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Off-Board Electric Vehicle Charger Plugged into EV
Renewable Energy

Fast Charging

By replacing traditional Si components with Wolfspeed Silicon Carbide upgrades, DC fast charger designs can realize significant gains in system efficiency, power density, and reliability.

Silicon Carbide is powering the future for Electric Vehicle Fast Charging

Fast charging DC stations can charge Electric Vehicles in just 30 minutes by bypassing the onboard charger (OBC) for rapid, direct battery charging.


Power Up Faster with Off-Board DC Fast-Charging Technology

When drivers of electric vehicles (EVs) need a charge while on the go, the best option is off-board DC fast chargers, which enable rapid charging of EV batteries. Unfortunately, traditional silicon’s (Si’s) switching performance is limited, which means that even the fastest of Si-based chargers is still going to be too slow for the average consumer’s expectation. Alternatively, Silicon Carbide (SiC) and its unique physical properties enable superior switching speed and higher power delivery— which means an efficient charge.

PRD-08367: EV Charging Power Topologies Design Guidebook
Off-Board DC Fast Charger diagram showing how power is converted from AC Source to the EV Battery
Off-Board DC Fast Charger

Featured Discrete Silicon Carbide MOSFETs for Fast Chargers

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Featured Discrete Silicon Carbide MOSFETs for Fast Chargers

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Featured Discrete Silicon Carbide MOSFETs for Fast Chargers - Filter By

Featured Discrete Silicon Carbide MOSFETs for Fast Chargers

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
C3M0075120J
1200 V
75 mΩ
Gen 3
30 A
51 nC
58 pF
113.6 W
150 °C
TO-263-7
1200 V
75 mΩ
Gen 3
30 A
54 nC
58 pF
113.6 W
150 °C
TO-247-3
1200 V
75 mΩ
Gen 3
32 A
51 nC
58 pF
113.6 W
150 °C
TO-247-4
650 V
45 mΩ
Gen 3
47 A
61 nC
101 pF
147 W
175 °C
TO-263-7
1200 V
32 mΩ
Gen 3
63 A
118 nC
129 pF
283 W
175 °C
TO-247-4
1200 V
32 mΩ
Gen 3
63 A
114 nC
129 pF
283 W
175 °C
TO-247-3
1200 V
40 mΩ
Gen 3
64 A
61 nC
94 pF
272 W
150 °C
TO-263-7
1200 V
40 mΩ
Gen 3
66 A
101 nC
103 pF
326 W
175 °C
TO-247-3
1200 V
40 mΩ
Gen 3
66 A
99 nC
103 pF
326 W
175 °C
TO-247-4
1200 V
32 mΩ
Gen 3
68 A
111 nC
133 pF
277 W
150 °C
TO-263-7
650 V
25 mΩ
Gen 3
80 A
109 nC
178 pF
271 W
175 °C
TO-263-7
1200 V
21 mΩ
Gen 3
81 A
160 nC
180 pF
469 W
175 °C
TO-247-3
1200 V
21 mΩ
Gen 3
100 A
162 nC
180 pF
469 W
175 °C
TO-247-4
1200 V
16 mΩ
Gen 3
115 A
207 nC
230 pF
556 W
175 °C
TO-247-3
1200 V
16 mΩ
Gen 3
115 A
211 nC
230 pF
556 W
175 °C
TO-247-4

Featured Discrete Silicon Carbide Schottky Diodes for Fast Chargers

Featured Discrete Silicon Carbide Schottky Diodes for Fast Chargers

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Featured Discrete Silicon Carbide Schottky Diodes for Fast Chargers

Product SKU
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Request Sample
Data Sheet
CAD Model
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
650 V
8 A
Gen 3
1.5 V
8 A
50 nC
176 W
TO-263-2
650 V
10 A
Gen 6
1.27 V
10 A
35 nC
109 W
TO-220-2
650 V
10 A
Gen 6
1.27 V
10 A
34 nC
99 W
TO-252-2
650 V
16 A
Gen 6
1.27 V
16 A
29 nC
100 W
TO-247-3
650 V
20 A
Gen 6
1.27 V
20 A
35 nC
116 W
TO-247-3
650 V
20 A
Gen 3
1.5 V
20 A
110 nC
250 W
TO-247-3
650 V
30 A
Gen 3
1.5 V
30 A
43 nC
179 W
TO-247-3

Wolfspeed WolfPACK™ Silicon Carbide Power Modules

Wolfspeed Silicon Carbide power modules can enable a simpler fast charging circuit topology using fewer components at very high efficiency (97.0% peak), switching at more than twice the frequency (45-250kHz). The higher frequency allows smaller magnetics and capacitors which, in turn, accounts for the smaller, lighter, and less costly system.

Wolfspeed WolfPACK™ FM3 and GM3 power modules are ideal for mid-power applications, including EV fast charging. The modules come in MOSFET half-bridge and six-pack configurations with a variety of mΩ options. The devices feature a baseplateless design, compact footprint, and press-fit pins, providing efficient, powerful performance while keeping system layouts straightforward for design and assembly processes.

The product family includes high performance Aluminum Nitride (AlN) substrate modules, which can reduce thermal resistance by over 50% and provide 7x higher thermal conductivity compared to Alumina.

Featured WolfPACK™ Silicon Carbide Power Modules for Fast Chargers

Featured WolfPACK™ Silicon Carbide Power Modules for Fast Chargers

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Featured WolfPACK™ Silicon Carbide Power Modules for Fast Chargers - Filter By

Featured WolfPACK™ Silicon Carbide Power Modules for Fast Chargers

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
View Product
GM
Half-Bridge
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM
Half Bridge (AlN substrate)
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM
Half-Bridge
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM
Half Bridge (AlN substrate)
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM
Half Bridge (AlN substrate)
1200 V
181 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM
Half-Bridge
1200 V
160 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM
Half-Bridge
1200 V
160 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM
Half Bridge (AlN substrate)
1200 V
181 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
FM
Half-Bridge
1200 V
117 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM
Half-Bridge
1200 V
117 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
GM
Half-Bridge
1200 V
141 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB011A12GM3T
New
GM
Half-Bridge
1200 V
141 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
FM
Half-Bridge
1200 V
84 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM
Half-Bridge
1200 V
84 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
GM
Six-pack (three-phase)
1200 V
50 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM
Six-pack (three-phase)
1200 V
50 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
FM
Six-pack (three-phase)
1200 V
30 A
21 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM
Full-Bridge
1200 V
48 A
21 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM
Six-pack (three-phase)
1200 V
30 A
21 mΩ
Gen 3
150 °C
62.8 mm x 33.8 mm
FM
Full-Bridge
1200 V
48 A
21 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM
Six-pack (three-phase)
1200 V
30 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM
Full-Bridge
1200 V
37 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM
Six-pack (three-phase)
1200 V
30 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM
Full-Bridge
1200 V
37 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm

Featured Reference Designs for Fast Chargers

Featured Reference Designs for Fast Chargers

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Featured Reference Designs for Fast Chargers - Filter By

Featured Reference Designs for Fast Chargers

Product SKU
Name
Type
Topology
Power
Discrete/Module
Package
Device SKU(s)
Designed By
View Product
DC to DC
LLC
6.6kW
Discrete
TO-247-3
Wolfspeed
TIDA-01604
AC to DC
Interleaved Totem-Pole PFC
6.6kW
Discrete
TO-247-3, TO-247-4
Texas Instruments
DC to DC
CLLLC
6.6kW
Discrete
TO-247-4
Texas Instruments
AC to DC, DC to DC
Totem-Pole PFC and CLLC
6.6kW
Discrete
TO-247-4
Wolfspeed
AC to DC, DC to DC
Totem-Pole PFC and CLLC
6.6kW
Discrete
TO-247-4, TO-247-3
Wolfspeed
DC to DC
DAB (Dual Active Bridge)
10kW
Discrete
TO-247-4
Texas Instruments
AC to DC
Three-Phase, 2-Level
22kW
Discrete
TO-247-4
Wolfspeed
DC to DC
CLLC
22kW
Discrete
TO-247-4
Wolfspeed

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Fast Charging

Maximize Efficiency in Isolated DC/DC Converters for EV Fast Charging Systems

Designing with Silicon Carbide (SiC) for Electric Vehicle DC Fast Chargers.
Continue Reading  White Paper
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