Fast Charging
By replacing traditional Si components with Wolfspeed Silicon Carbide upgrades, DC fast charger designs can realize significant gains in system efficiency, power density, and reliability.
Silicon Carbide is powering the future for Electric Vehicle Fast Charging
Fast charging DC stations can charge Electric Vehicles in just 30 minutes by bypassing the onboard charger (OBC) for rapid, direct battery charging.
Power Up Faster with Off-Board DC Fast-Charging Technology
When drivers of electric vehicles (EVs) need a charge while on the go, the best option is off-board DC fast chargers, which enable rapid charging of EV batteries. Unfortunately, traditional silicon’s (Si’s) switching performance is limited, which means that even the fastest of Si-based chargers is still going to be too slow for the average consumer’s expectation. Alternatively, Silicon Carbide (SiC) and its unique physical properties enable superior switching speed and higher power delivery— which means an efficient charge.
Featured Discrete Silicon Carbide MOSFETs for Fast Chargers
Featured Discrete Silicon Carbide MOSFETs for Fast Chargers
Featured Discrete Silicon Carbide MOSFETs for Fast Chargers - Filter By
Featured Discrete Silicon Carbide MOSFETs for Fast Chargers
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | RDS(ON) at 25°C | Generation | Current Rating | Gate Charge Total | Output Capacitance | Total Power Dissipation (PTOT) | Tjmax | Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1200 V | 75 mΩ | Gen 3 | 30 A | 51 nC | 58 pF | 113.6 W | 150 °C | TO-263-7 | |||||
1200 V | 75 mΩ | Gen 3 | 30 A | 54 nC | 58 pF | 113.6 W | 150 °C | TO-247-3 | |||||
1200 V | 75 mΩ | Gen 3 | 32 A | 51 nC | 58 pF | 113.6 W | 150 °C | TO-247-4 | |||||
650 V | 45 mΩ | Gen 3 | 47 A | 61 nC | 101 pF | 147 W | 175 °C | TO-263-7 XL | |||||
1200 V | 32 mΩ | Gen 3 | 63 A | 118 nC | 129 pF | 283 W | 175 °C | TO-247-4 | |||||
1200 V | 32 mΩ | Gen 3 | 63 A | 114 nC | 129 pF | 283 W | 175 °C | TO-247-3 | |||||
1200 V | 40 mΩ | Gen 3 | 64 A | 61 nC | 94 pF | 272 W | 150 °C | TO-263-7 XL | |||||
1200 V | 40 mΩ | Gen 3 | 66 A | 101 nC | 103 pF | 326 W | 175 °C | TO-247-3 | |||||
1200 V | 40 mΩ | Gen 3 | 66 A | 99 nC | 103 pF | 326 W | 175 °C | TO-247-4 | |||||
1200 V | 32 mΩ | Gen 3 | 68 A | 111 nC | 133 pF | 277 W | 150 °C | TO-263-7 XL | |||||
650 V | 25 mΩ | Gen 3 | 80 A | 109 nC | 178 pF | 271 W | 175 °C | TO-263-7 XL | |||||
1200 V | 21 mΩ | Gen 3 | 81 A | 160 nC | 180 pF | 469 W | 175 °C | TO-247-3 | |||||
1200 V | 21 mΩ | Gen 3 | 100 A | 162 nC | 180 pF | 469 W | 175 °C | TO-247-4 | |||||
1200 V | 16 mΩ | Gen 3 | 115 A | 207 nC | 230 pF | 556 W | 175 °C | TO-247-3 | |||||
1200 V | 16 mΩ | Gen 3 | 115 A | 211 nC | 230 pF | 556 W | 175 °C | TO-247-4 |
Featured Discrete Silicon Carbide Schottky Diodes for Fast Chargers
Featured Discrete Silicon Carbide Schottky Diodes for Fast Chargers
Featured Discrete Silicon Carbide Schottky Diodes for Fast Chargers - Filter By
Featured Discrete Silicon Carbide Schottky Diodes for Fast Chargers
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | Current Rating | Generation | Forward Voltage(VF(type)) | Maximum Continuous Current (IF) | Total Capacitive Charge (QC (typ)) | Total Power Dissipation (PTOT) | Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|
650 V | 8 A | Gen 3 | 1.5 V | 8 A | 50 nC | 176 W | TO-263-2 | |||||
650 V | 10 A | Gen 6 | 1.27 V | 10 A | 35 nC | 109 W | TO-220-2 | |||||
650 V | 10 A | Gen 6 | 1.27 V | 10 A | 34 nC | 99 W | TO-252-2 | |||||
650 V | 16 A | Gen 6 | 1.27 V | 16 A | 29 nC | 100 W | TO-247-3 | |||||
650 V | 20 A | Gen 6 | 1.27 V | 20 A | 35 nC | 116 W | TO-247-3 | |||||
650 V | 20 A | Gen 3 | 1.5 V | 20 A | 110 nC | 250 W | TO-247-3 | |||||
650 V | 30 A | Gen 3 | 1.5 V | 30 A | 43 nC | 179 W | TO-247-3 |
Wolfspeed WolfPACK™ Silicon Carbide Power Modules
Wolfspeed Silicon Carbide power modules can enable a simpler fast charging circuit topology using fewer components at very high efficiency (97.0% peak), switching at more than twice the frequency (45-250kHz). The higher frequency allows smaller magnetics and capacitors which, in turn, accounts for the smaller, lighter, and less costly system.
Wolfspeed WolfPACK™ FM3 and GM3 power modules are ideal for mid-power applications, including EV fast charging. The modules come in MOSFET half-bridge and six-pack configurations with a variety of mΩ options. The devices feature a baseplateless design, compact footprint, and press-fit pins, providing efficient, powerful performance while keeping system layouts straightforward for design and assembly processes.
The product family includes high performance Aluminum Nitride (AlN) substrate modules, which can reduce thermal resistance by over 50% and provide 7x higher thermal conductivity compared to Alumina.
Featured WolfPACK™ Silicon Carbide Power Modules for Fast Chargers
Featured WolfPACK™ Silicon Carbide Power Modules for Fast Chargers
Featured WolfPACK™ Silicon Carbide Power Modules for Fast Chargers - Filter By
Featured WolfPACK™ Silicon Carbide Power Modules for Fast Chargers
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Tjmax | Module Size | View Product |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CAB004M12GM4 Coming Soon | GM | Half-Bridge | 1200 V | 200 A | 4 mΩ | Gen 4 | 175 °C | 62.8 mm x 56.7 mm | |||||
CAB004M12GM4T Coming Soon | GM | Half-Bridge | 1200 V | 200 A | 4 mΩ | Gen 4 | 175 °C | 62.8 mm x 56.7 mm | |||||
CAB5R0A23GM4 New | GM | Half Bridge (AlN substrate) | 2300 V | 200 A | 5 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | |||||
GM | Half Bridge (AlN substrate) | 2300 V | 200 A | 5 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM | Half-Bridge | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM | Half Bridge (AlN substrate) | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM | Half-Bridge | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM | Half Bridge (AlN substrate) | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
CAB6R0A23GM4 New | GM | Half Bridge (AlN substrate) | 2300 V | 200 A | 6 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | |||||
GM | Half Bridge (AlN substrate) | 2300 V | 200 A | 6 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
CAB7R5A23GM4 New | GM | Half Bridge (AlN substrate) | 2300 V | 170 A | 7.5 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | |||||
GM | Half Bridge (AlN substrate) | 2300 V | 170 A | 7.5 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM | Half Bridge (AlN substrate) | 1200 V | 181 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM | Half-Bridge | 1200 V | 160 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM | Half-Bridge | 1200 V | 160 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM | Half Bridge (AlN substrate) | 1200 V | 181 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
FM | Half-Bridge | 1200 V | 117 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM | Half-Bridge | 1200 V | 117 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
GM | Half-Bridge | 1200 V | 141 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM | Half-Bridge | 1200 V | 141 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
CBB011M12GM4 Coming Soon | GM | Full-Bridge | 1200 V | 100 A | 11 mΩ | Gen 4 | 175 °C | 62.8 mm x 56.7 mm | |||||
CBB011M12GM4T Coming Soon | GM | Full-Bridge | 1200 V | 100 A | 11 mΩ | Gen 4 | 175 °C | 62.8 mm x 56.7 mm | |||||
CHB011M12GM4 Coming Soon | GM | T-Type | 1200 V | 100 A | 11 mΩ | Gen 4 | 175 °C | 62.8 mm x 56.7 mm | |||||
CHB011M12GM4T Coming Soon | GM | T-Type | 1200 V | 100 A | 11 mΩ | Gen 4 | 175 °C | 62.8 mm x 56.7 mm | |||||
FM | Half-Bridge | 1200 V | 84 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM | Half-Bridge | 1200 V | 84 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
GM | Six-pack (three-phase) | 1200 V | 50 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM | Six-pack (three-phase) | 1200 V | 50 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
FM | Six-pack (three-phase) | 1200 V | 30 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM | Full-Bridge | 1200 V | 48 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM | Six-pack (three-phase) | 1200 V | 30 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM | Full-Bridge | 1200 V | 48 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM | Six-pack (three-phase) | 1200 V | 30 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM | Full-Bridge | 1200 V | 37 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM | Six-pack (three-phase) | 1200 V | 30 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM | Full-Bridge | 1200 V | 37 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm |
Featured Reference Designs for Fast Chargers
Featured Reference Designs for Fast Chargers
Featured Reference Designs for Fast Chargers - Filter By
Featured Reference Designs for Fast Chargers
Product SKU | Name | Type | Topology | Power | Discrete/Module | Package | Device SKU(s) | Designed By | View Product |
---|---|---|---|---|---|---|---|---|---|
DC to DC | LLC | 6.6kW | Discrete | TO-247-3 | Wolfspeed | ||||
AC to DC | Interleaved Totem-Pole PFC | 6.6kW | Discrete | TO-247-3, TO-247-4 | Texas Instruments | ||||
DC to DC | CLLLC | 6.6kW | Discrete | TO-247-4 | Texas Instruments | ||||
AC to DC, DC to DC | Totem-Pole PFC and CLLC | 6.6kW | Discrete | TO-247-4 | Wolfspeed | ||||
AC to DC, DC to DC | Totem-Pole PFC and CLLC | 6.6kW | Discrete | TO-247-4, TO-247-3 | Wolfspeed | ||||
DC to DC | DAB (Dual Active Bridge) | 10kW | Discrete | TO-247-4 | Texas Instruments | ||||
AC to DC | Three-Phase, 2-Level | 22kW | Discrete | TO-247-4 | Wolfspeed | ||||
DC to DC | CLLC | 22kW | Discrete | TO-247-4 | Wolfspeed |