Features
- Industry-Leading; Reliable Silicon Carbide MOSFET Technology in Robust; Well-Established 62mm Form Factor
- Low-Inductance Design (10 – 15 nH) for Fast Switching with Low Power Losses
Product SKU | Buy Online | Data Sheet | CAD Model | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Maximum Junction Temperature | Module Size | Status | Qualification | View Product |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CAB530M12BM3 | 62 mm | Half-Bridge | 1200 V | 530 A | 2.6 mΩ | Gen 3 MOS | 150 °C | 105 x 62 x 31 mm | Active | Industrial |
Document Type | Document Name | Last Updated |
---|---|---|
Data Sheets | 01/2024 | |
User Guide | 01/2024 | |
User Guide | 01/2024 | |
User Guide | 12/2023 | |
User Guide | 12/2023 | |
Application Notes | 03/2024 | |
Application Notes | 01/2024 | |
Application Notes | 11/2023 | |
Application Notes | 08/2023 | |
Application Notes | 01/2023 | |
Application Notes | 09/2022 | |
Application Notes | 11/2021 | |
Product Catalog | 05/2024 | |
Sales Sheets & Flyers | 01/2024 | |
Sales Sheets & Flyers | 01/2024 | |
Sales Sheets & Flyers | 02/2023 | |
Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
| 04/2024 |
Sales Terms | 12/2021 |