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Gate Driver Board for 3rd Generation (C3M™) Silicon Carbide MOSFETs
CGD15SG00D2
Features:
- Supports 650 V and 1200 V (C3M™) Silicon Carbide MOSFETs
- Gate driver output voltage = +15 V(max) / -3.3 V(min)
- Low capacitance LLC isolated power supply
- High Creepage (8mm) clearance
- Resistor network allows user friendly optimization of gate signals
- Full reference design files available for download
- Available for purchase
Documents, Tools, & Support
- Technical & Sales Documents
- Tools & Support
Documents
Document Type | Document Name | Last Updated |
|---|---|---|
| User Guide | 10/2024 | |
| Design Files | 12/2024 | |
| Design Files | 12/2024 | |
| Design Files | 12/2024 | |
| Design Files | 12/2024 | |
| Design Files | 12/2024 | |
| Application Notes | 01/2023 |
Knowledge Center
Two Engineers, One SpeedVal™ Kit: Unlock the power of silicon carbide in Industrial Motor Drives with SpeedVal Kit
Accelerate and de-risk the silicon carbide design process for three-phase industrial motor drives and meet leading efficiency standards with the SpeedVal™ Kit Three-Phase Motherboard.
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