- EV On-Board Charger
- Industrial
- Automotive
![Product Shot of a Wolfspeed 6.6 kW High Power Density Bi-Directional EV On-Board Charger reference design](/static/8bc225d5afb48fb74fa45478674f4c8a/e08cd/crd-06600ff065n_1.png)
6.6 kW Bi-Directional Totem-Pole PFC and CLLC, High Power Density
- Peak efficiencies of 96.5%
- Power densities of 53W/in^3 or 3KW/L
Specifications
- Universal single phase input voltage between 90V and 265V
- Output Voltage of 250V-450V DC
- 18A Output Current in charging mode
- Front End AC/DC PFC using CCM Totem-Pole Bi-Directional Topology operating at 67Khz
- Bi-Directional DC/DC CLLC resonant converter operating at 148-300KHz
- Constant Current; Constant Voltage or Constant Power Mode
- Unique integrated heatsink design removes heat from MOSFET’s; transformer and inductors
- CAN Interface
Reference Design Files for
- Main board
- Controller Board
- Aux Power Board
- Firmware and GUI
- Mechanical Specifications
Documents, Tools, & Support
- Block Diagram
- Technical & Sales Documents
- Tools & Support
![crd 06600ff065n k block diagram](/static/ed33095dd1b98e3efb16f2be17f52593/23a71/crd_06600ff065n_k_block_diagram.png)
2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V
2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V
2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V
5A, 3kV, Isolated Gate Driver with Internal Miller Clamp for Q2, Q3, Q6, Q7, Q8, Q9, Q10, Q11, Q12, Q13, Q14, and Q15
5A, 3kV, Isolated Gate Driver with Internal Miller Clamp for Q2, Q3, Q6, Q7, Q8, Q9, Q10, Q11, Q12, Q13, Q14, and Q15
MCU with control algorithms for the AC-DC and DC-DC Stages
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.](/static/3a2e7c3d15bf8a5d850215fe66ad9317/e08cd/wolfspeed_power_to-247-3_package_web.png)
Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.](/static/3a2e7c3d15bf8a5d850215fe66ad9317/e08cd/wolfspeed_power_to-247-3_package_web.png)
Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
Novel design incorporating magnetics, resonant capacitors, and SiC MOSFETs in a single thermal block for simple attachment to a cold plate