- EV On-Board Charger
- EV Fast Charging
22 kW Bi-Directional CLLC Utilizing IMS Board
![Product Shot of Wolfspeed's Reference Design of a 22 kW Bi-Directional CLLC Utilizing IMS Board](/static/8d2f3879d5a3ae763333ca43acf284df/e08cd/crd-22dd12n-j2.png)
The design accomplishes
- Peak efficiency of 98.6% in both charging and discharging mode
- Power density of 9.4 kW/L
- Bi-directional operation
Specifications
Charging Mode
- Input Voltage: 380 V – 900 V DC
- Output Voltage: 480 V – 800 V DC Nominal. System capable of 200 V – 800 V DC
- At Vin = 650 V – 900 V DC, Output Power: 22 kW; Output current: 36 A
- At Vin = 380 V – 900 V DC, Output Power: 6.6 kW; Output current: 26.4 A
Discharging Mode
- Input Voltage: 300 V – 800 V DC
- Output Voltage: 360 V – 750 V DC Nominal
- Output Power: 6.6 kW; Output current: 19 A
Full bridge CLLC resonant converter operating at 135 – 250 kHz
Tooled heatsink to simulate cooling plate
CAN interface
Reference Design Files for
- Main Board
- Controller Board
- AUX Power Board
- Driver Board
- HBIMS (Half-Bridge Insulated Metal Substrate) Board
- Firmware and GUI
- Mechanical Specifications
Documents, Tools, & Support
- Block Diagram
- Technical & Sales Documents
- Tools & Support
![crd 22dd12n block diagram](/static/e942cff216e83aebd4b24c4ffd26bb4f/0556d/crd_22dd12n_block_diagram.png)
2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V
2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V
5A, High Voltage, Isolated Gate Driver with Internal Miller Clamp for Q1, Q2, Q3, Q4, Q7, Q16, Q17, Q18
5A, High Voltage, Isolated Gate Driver with Internal Miller Clamp for Q1, Q2, Q3, Q4, Q7, Q16, Q17, Q18
MCU with control algorithms for the AC-DC and DC-DC Stages
![Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/388f1fda2ff2463861352f8f97f48e3c/e08cd/wolfspeed_power_j1-to-263-7-xl_package_web.png)
Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode
![Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/388f1fda2ff2463861352f8f97f48e3c/e08cd/wolfspeed_power_j1-to-263-7-xl_package_web.png)
Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode
![Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/388f1fda2ff2463861352f8f97f48e3c/e08cd/wolfspeed_power_j1-to-263-7-xl_package_web.png)
Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode
![Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/388f1fda2ff2463861352f8f97f48e3c/e08cd/wolfspeed_power_j1-to-263-7-xl_package_web.png)
Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode
![Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/388f1fda2ff2463861352f8f97f48e3c/e08cd/wolfspeed_power_j1-to-263-7-xl_package_web.png)
Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode
![Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/388f1fda2ff2463861352f8f97f48e3c/e08cd/wolfspeed_power_j1-to-263-7-xl_package_web.png)
Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode
![Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/388f1fda2ff2463861352f8f97f48e3c/e08cd/wolfspeed_power_j1-to-263-7-xl_package_web.png)
Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode
![Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/388f1fda2ff2463861352f8f97f48e3c/e08cd/wolfspeed_power_j1-to-263-7-xl_package_web.png)
Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode