Features
- Automotive Qualified
- High blocking voltage with industry leading low RDS(on) over temperature stability
- Resistant to latch-up
- High gate resistance for drives
EPM3-1200-R013D
EPM3-1200-R013D
1200 V, 13 mΩ, 160 A, Gen 3+ Bare Die SiC MOSFET
Wolfspeed’s Generation 3+ of high performance silicon carbide MOSFET in a packageless bare die format to be implemented into any custom module design. The high blocking voltage with low on-resistance, high speed switching with low capacitance make this MOSFET ideal for applications in automotive drivetrain and motor drives.
1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+
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1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+
Product SKU | Buy Online | Data Sheet | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Maximum Junction Temperature | Generation | Status |
|---|---|---|---|---|---|---|---|---|---|---|---|
EPM3-1200-R013D | 1200 V | 13 mΩ | 160 A | 226 pF | 1259 nC | 34 ns | 175 °C | Gen 3+ | Active |
Product Details
Benefits
- Improves System Efficiency with lower switching and conduction losses
- Reduces System Size, Weight, and Cooling Requirements
- Enables high switching frequency operation
- Easy to parallel and compatible with standard gate drive design
Application
- Automotive Drivetrain
- Motor Drives
- Solid State Circuit Breaker
- Resonant Topologies
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name | Last Updated |
|---|---|---|
| Application Notes | 04/2024 | |
| Application Notes | 11/2023 | |
| Application Notes | 01/2023 | |
| Application Notes | 11/2021 | |
| Sales Sheets & Flyers | 03/2022 | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
| 04/2024 |
| Sales Terms | 12/2021 |
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