1200 V & 1700 V Half-Bridge Power Module Footprint Designed for Ultra-High Power Density
Wolfspeed has developed the HM power module platform to provide the benefits of Silicon Carbide (SiC) in power density sensitive applications; while maintaining the baseplate compatibility of a 62mm module. The HM platform’s Silicon Carbide optimized packaging enables 175°C continuous junction operation; with a high-reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions and a lightweight AlSiC baseplate. The HM3 is a perfect fit for demanding applications such as industrial test equipment, medical power supplies, aerospace and traction drives.
Low Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced Losses
High Junction Temperature (175 °C) Operation
Configurations Available with both Second & Third Generation SiC MOSFETs
Lightweight AlSiC Baseplate
Silicon Nitride Insulator for Robust Thermal Cycling Capability
Benefits
Lightweight; Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit
Increased System Efficiency; due to Low Switching & Conduction Losses of Silicon Carbide
High-Reliability Material Selection enabling High-Temperature Operation
Applications
Railway & Traction
Solar & Renewable Energy
EV Chargers
Industrial Automation & Testing
Medical Power Supplies
Motor Drives
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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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