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SiC Materials

SiC Epitaxy

Keeping Pace with the World's Demand for SiC Power

Industry-Leading Flexibility and Scale

With more than 30 years of SiC development and manufacturing experience, Wolfspeed produces the industry’s broadest range of SiC materials. Offering n-type conductive SiC products and a variety of SiC epitaxy options, Wolfspeed delivers the quality and quantity necessary to support the rapidly expanding demand for high-efficiency, SiC power semiconductors.

When you partner with Wolfspeed, you get the best and most innovative materials.

n-type and SiC Epitaxy Line CardDownload

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Product Descriptions

Wolfspeed produces n-type and p-type SiC epitaxial layers on SiC substrates, and has the widest range of available layer thickness from sub-micron to >200μm. Unless noted otherwise on the product quotation, the epitaxial layer structure will meet or exceed the following specifications. Additional comments, terms and conditions may be found in the specification document.

Substrate Orientation: SiC Epitaxy is available only for off-axis substrates

Conductivity
n-type
p-type
Dopant
Nitrogen
Aluminum
  Net doping density
ND-NA
NA-ND
  Silicon face
5E14 – 1E19/cm3
5E14 – 1E20/cm3
  Tolerance
±20%
±50%
Thickness range
0.2 - 200 microns
0.2 - 200 microns
  Tolerance
±8% of selected thickness
±10% of selected thickness

Contact Wolfspeed Materials Sales for specification on multi-layer or custom epitaxy requests


Product Specifications

Characteristics
Maximum Acceptability Limits
Test Methods
Defect Definitions
Methodology
Scratches
cumulative scratch length ≤150 mm
Diffuse
Illumination
D1
M1,M2
Backside cleanliness
95% clean
Diffuse
Illumination
D2
M1,M2
Edge chips
See Substrate Specifications
Diffuse
Illumination
D3
M2
Epi defects*
<3/cm3
Lasertec SICA
D4-D5
M3
Net doping
See Product Description table
CV
-
M4
Thickness
See Product Description table
FTIR
-
M5

*Note: 3mm edge exclusion, <70μm thickness

Tools & Support

n-type and SiC Epitaxy Line Card

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