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Image that includes both the front and back of the TO-252-2 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C2D05120E

1200 V, 5 A, TO-252-2 package, Industrial qualified, Discrete SiC Schottky Diode
NOTE: Not recommended for new designs. C4D05120E is the recommended replacement.

Parametric Data

C2D05120E

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C2D05120E

Product SKU
Data Sheet
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
Status
C2D05120E
1200 V
5 A
Gen 2
1.6 V
8.5 A
28 nC per leg
136 W
TO-252-2
Industrial
NRND

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
Data Sheets
01/2024
Application Notes
09/2022
Application Notes
02/2022
Product Catalog
05/2024
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021

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Design Resources

Analyzing Transient Behavior Using a Double Pulse Test Simulation in LTspice

See how Wolfspeed LTspice models can make designing with silicon carbide in power electronics systems more efficient, cost-effective, and accurate. Get started optimizing your system design, without the need for physical samples or test kits.
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