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E4D20120G
1200 V, 20 A, TO-263-2 package, Automotive qualified, Discrete SiC Schottky Diode
Note Obsolete.

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E4D20120G
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E4D20120G
Product SKU | Buy Online | Request Sample | Data Sheet | Blocking Voltage | Current Rating | Generation | Forward Voltage(VF(type)) | Maximum Continuous Current (IF) | Total Capacitive Charge (QC (typ)) | Total Power Dissipation (PTOT) | Package | Qualification | Status |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
E4D20120G | 1200 V | 20 A | Gen 4 | 1.5 V | 20 A | 110 nC | 250 W | TO-263-2 | Automotive | Obsolete |
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Documents, Tools & Support
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Documents
Document Type | Document Name | Last Updated |
---|---|---|
Data Sheets | 11/2023 | |
Application Notes | 02/2025 | |
Application Notes | 07/2024 | |
Application Notes | 09/2022 | |
Application Notes | 02/2022 | |
Application Notes | 09/2015 | |
Product Catalog | 01/2025 | |
Sales Terms | Power Product Packing & Shipping Reference Guide This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
| 04/2024 |
Sales Terms | 12/2021 |