• English
  • 简体中文
  • 繁體中文
Contact
View Cart

E4D20120G

1200 V, 20 A, TO-263-2 package, Automotive qualified, Discrete SiC Schottky Diode
Note Obsolete.
Image that includes both the front and back of the TO-263-2 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Parametric Data

E4D20120G

No filters selected, showing all 1 products

E4D20120G

Product SKU
Buy Online
Request Sample
Data Sheet
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
Status
E4D20120G
1200 V
20 A
Gen 4
1.5 V
20 A
110 nC
250 W
TO-263-2
Automotive
Obsolete

End of Section

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
Data Sheets11/2023
Application Notes02/2025
Application Notes07/2024
Application Notes09/2022
Application Notes02/2022
Application Notes09/2015
Product Catalog01/2025
Sales Terms
Power Product Packing & Shipping Reference Guide
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms12/2021

Knowledge Center

View All
Powerful Perspectives

Waves of Innovation: Partnering to Electrify Marine Mobility

Continue Reading  Thought Leadership

Support

Technical SupportPower Applications Forum

Footer

Social Media

  • Instagram
  • X
  • LinkedIn
  • YouTube
Copyright © 2025 Wolfspeed, Inc.