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E4D20120G
1200 V, 20 A, TO-263-2 package, Automotive qualified, Discrete SiC Schottky Diode
Note Obsolete.
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E4D20120G
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E4D20120G
Product SKU | Buy Online | Request Sample | Data Sheet | Blocking Voltage | Current Rating | Generation | Forward Voltage(VF(type)) | Maximum Continuous Current (IF) | Total Capacitive Charge (QC (typ)) | Total Power Dissipation (PTOT) | Package | Qualification | Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
E4D20120G | 1200 V | 20 A | Gen 4 | 1.5 V | 20 A | 110 nC | 250 W | TO-263-2 | Automotive | Obsolete |
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name | Last Updated |
|---|---|---|
| Data Sheets | 11/2023 | |
| Application Notes | 07/2024 | |
| Application Notes | 05/2023 | |
| Application Notes | 09/2022 | |
| Application Notes | 02/2022 | |
| Application Notes | 09/2015 | |
| Product Catalog | 05/2024 | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
| 04/2024 |
| Sales Terms | 12/2021 |
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