Evaluation Board for 900 V Silicon Carbide C3M™ MOSFET in a 7-pin D2PAK (TO-263-7L)

This evaluation board demonstrates the switching and thermal performance of 900 V Silicon Carbide (SiC) C3M™ MOSFET in a 7-pin D2PAK (TO-263-7L) configured in a half bridge topology. The board is designed for characterizing E_ON and E_OFF losses and steady state thermal performance in Silicon Carbide MOSFETs. The PCB contains AlN inserts under the MOSFETs to provide electrical isolation and optimized heat transfer to the heat sink. This design :

• Demonstrates use of an AlN inlay PCB for thermal management of surface mount power devices
• Serves as a PCB layout example for driving D2PAK SiC MOSFETs

Specifications

• Max DC Bus Voltage of 650V
• Max Power of 4.2kW @ 100kHz
• Optimized locations for scope probe measurements of drain current; V_GS; and V_ds
• Predrilled thermocouple locations in the heat sink under the MOSFET
• Synchronous and asynchronous buck and boost topologies supported
• Kit includes two SMA and BNC adapters for measuring V_GS waveforms
• Includes heatsink; fan; fan guard; and thermal pads
• Can be configured as full bridge DC/DC by using two evaluation boards