This reference design demonstrates the use 1700V silicon carbide (SiC) MOSFETs in a single switch flyback configuration and provides a high-efficiency and high-power density optimized design example. The C3M00900170x MOSFET family utilized in this design has a wide operating gate-source voltage (Vgs) range 12-18V making it a easy and low-cost drop-in compatible with existing Si or SiC single-switch designs. This primary side regulated converter (with an auxillary winding) eliminates the need for an opto-coupler and provides an space and cost optimized solution for all industrial applications like Solar Inverters, EV charging, motor drive and HVAC applications, etc.