Skip to Main Content
Wolfspeed Logo
  • English
  • 简体中文
  • 繁體中文
Contact
View Cart
Wolfspeed Power Reference Design CRD-25BDA6512N-K 25 kW Bi-directional T-type Inverter

25 kW High Efficiency High Power Density Bi-directional T-type Inverter

CRD-25BDA6512N-K
The 25 kW bi-directional T-type inverter demonstrates the performance of Wolfspeed’s 650 V and 1200 V silicon carbide (SiC) MOSFETs within high power systems such as solar inverters, uninterruptible power supplies (UPS), EV fast chargers, HVDC applications, high power PSU for AI/datacenters and energy storage systems. This reference design is offered as a comprehensive evaluation tool that can be used as a starting point for new SiC designs. It has two operating modes: inverter mode and power factor correction (PFC) mode.

This Design Accomplishes:

  • Peak efficiencies of >99% in both inverter and PFC mode
  • Power density of >6 kW/L

Inverter Mode Specifications:

  • DC Input Voltage: 800V DC
  • Max current: 36A
  • AC Output Voltage: 380-480Vline-line 50/60Hz
  • Max power: 25kW
  • Switching Frequency: 60kHz

PFC Mode Specifications:

  • Three Phase Input Voltage 380-480Vline-line 50/60Hz
  • Max current: 36A
  • Output DC Voltage: 650V → 900V; Max power 25kW
  • Max current: 36A
  • Switching Frequency: 60kHz

Applications

  • Solar inverters
  • Uninterruptible power supplies (UPS)
  • Energy storage systems
  • EV fast charging
  • Industrial power supplies

What's Included

Design Files for:

  • Main board

Request Separately

Documents, Tools, & Support

Circuit block diagram of Wolfspeed Reference Design CRD-25BDA6512N-K
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
C2M1000170J

1700 V, 1000 mΩ, 5.3 A, TO-263-7 package, Gen 2 Discrete SiC MOSFET

Learn More
UCC5350MCDWVR

5A, High Voltage, Isolated Gate Driver with Internal Miller Clamp

Learn More
ACS733KLATR

1 MHz Bandwidth, Galvanically Isolated Current Sensor IC

Learn More
TMS320F280039C C2000™

32-bit MCU 120-MHz 384-KB flash, FPU, TMU with CLA, CLB, AES and CAN-FD

Learn More

Knowledge Center

View All
Industrial E-Mobility

Driving Industrial E-Mobility With Silicon Carbide Semiconductors

Continue Reading  White Paper

Support

Technical SupportPower Applications Forum
Buy OnlineFind a Distributor
Request SamplesVisit the Sample Center

Footer

Wolfspeed Logo

Social Media

  • Instagram
  • X
  • LinkedIn
  • YouTube
Copyright © 2025 Wolfspeed, Inc.