25 kW High Efficiency High Power Density Bi-directional T-type Inverter

CRD-25BDA6512N-K

The 25 kW bi-directional T-type inverter demonstrates the performance of Wolfspeed’s 650 V and 1200 V silicon carbide (SiC) MOSFETs within high power systems such as solar inverters, uninterruptible power supplies (UPS), EV fast chargers, HVDC applications, high power PSU for AI/datacenters and energy storage systems. This reference design is offered as a comprehensive evaluation tool that can be used as a starting point for new SiC designs. It has two operating modes: inverter mode and power factor correction (PFC) mode.

This Design Accomplishes:

Peak efficiencies of >99% in both inverter and PFC mode
Power density of >6 kW/L

Inverter Mode Specifications:

DC Input Voltage: 800V DC
Max current: 36A
AC Output Voltage: 380-480V_line-line 50/60Hz
Max power: 25kW
Switching Frequency: 60kHz

PFC Mode Specifications:

Three Phase Input Voltage 380-480V_line-line 50/60Hz
Max current: 36A
Output DC Voltage: 650V → 900V; Max power 25kW
Max current: 36A
Switching Frequency: 60kHz

Wolfspeed Power Reference Design CRD-25BDA6512N-K 25 kW Bi-directional T-type Inverter

Wolfspeed Power Reference Design CRD-25BDA6512N-K 25 kW Bi-directional T-type Inverter

Applications

Solar inverters
Uninterruptible power supplies (UPS)
Energy storage systems
EV fast charging
Industrial power supplies

What's Included

Design Files for:

Main board

Request Separately

Product Compatibility

Documents, Tools, & Support

Block Diagram
Efficiency Results
Technical & Sales Documents
Tools & Support

Circuit block diagram of Wolfspeed Reference Design CRD-25BDA6512N-K

Circuit block diagram of Wolfspeed Reference Design CRD-25BDA6512N-K

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

C2M1000170J

1700 V, 1000 mΩ, 5.3 A, TO-263-7 package, Gen 2 Discrete SiC MOSFET

UCC5350MCDWVR

5A, High Voltage, Isolated Gate Driver with Internal Miller Clamp

ACS733KLATR

1 MHz Bandwidth, Galvanically Isolated Current Sensor IC

TMS320F280039C C2000™

32-bit MCU 120-MHz 384-KB flash, FPU, TMU with CLA, CLB, AES and CAN-FD

Knowledge Center

Powerful Perspectives

Inspiration to Beat Hesitation: 5 Reasons Silicon Carbide is an Unstoppable Force

Silicon carbide plays a role in the entire consumer and industrial supply chain, from turning wheels on roads to powering the chips in our data centers and the heat pumps in our homes.

Continue Reading Thought Leadership

Design Resources

Key Testing Considerations for Migrating from Silicon (Si) to Silicon Carbide (SiC) in Power Designs

Register Now Webinars

Powerful Perspectives

Partnering for Maximum Impact: An Interview with Paul Wheeler

Continue Reading Thought Leadership

Support

Technical SupportPower Applications Forum

Buy OnlineFind a Distributor

Request SamplesVisit the Sample Center