Features
- Automotive Qualified
- High blocking voltage with industry leading low RDS(on) over temperature stability
- Resistant to latch-up
- High gate resistance for drives
EPM3-1200-0014D1
1200 V, 14 mΩ, Gen 3+, Automotive qualified, Bare Die SiC MOSFET
Parametric Data
1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+
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1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+
Product SKU | Buy Online | Data Sheet | Status | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Tjmax | Generation | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
EPM3-1200-0014D1 | Active | 1200 V | 14 mΩ | 149 A | 200 pF | 1068 nC | 31 ns | 175 °C | Gen 3+ | Automotive |
Ordering & Compliance
EPM3-1200-0014D1 Ordering
| Part Number | EPM3-1200-0014D1 |
|---|---|
| Order Status | Active |
| Buy Online | |
| Container Type | Available in Film Frame and Tape & Reel |
EPM3-1200-0014D1 Compliance
| Halogen Free | Yes |
|---|---|
| Lead Free | Yes |
| RoHS Declaration | |
| REACH Declaration | |
| California Prop 65 | Learn More |
| ECCN | EAR99 |
Product Details
Benefits
- Improves System Efficiency with lower switching and conduction losses
- Reduces System Size, Weight, and Cooling Requirements
- Enables high switching frequency operation
- Easy to parallel and compatible with standard gate drive design
Typical Applications
- Automotive Drivetrain
- Motor Drives
- Solid State Circuit Breaker
- Resonant Topologies
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name | Last Updated |
|---|---|---|
| Application Notes | 04/2024 | |
| Application Notes | 11/2023 | |
| Application Notes | 01/2023 | |
| Application Notes | 11/2021 | |
| Sales Sheets & Flyers | 03/2022 | |
| Sales Terms | 12/2021 |
Knowledge Center
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