Features
- Robust intrinsic diode with low reverse recovery charge (Qrr)
- High-speed switching with low output capacitance
- Low conduction losses over temperature
- Avalanche ruggedness
CPM2-1200-0160A
1200 V, 160 mΩ, Gen 2, Industrial qualified, Bare Die SiC MOSFET
Note Last Time Buy.
Parametric Data
1200 V Bare Die SiC MOSFETs – Gen 2
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1200 V Bare Die SiC MOSFETs – Gen 2
Product SKU | Buy Online | Status | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Tjmax | Generation | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
CPM2-1200-0160A | Last Time Buy | 1200 V | 160 mΩ | 18 A | 40 nC | 55 pF | 192 nC | 20 ns | 175 °C | Gen 2 | Industrial |
Ordering & Compliance
CPM2-1200-0160A Ordering
| Part Number | CPM2-1200-0160A |
|---|---|
| Order Status | Last Time Buy |
| Buy Online | |
| Container Type | Available in Film Frame and Tape & Reel |
CPM2-1200-0160A Compliance
| California Prop 65 | Learn More |
|---|---|
| ECCN | EAR99 |
Product Details
Benefits
- Improves system efficiency with lower switching loss
- Reduces system size; weight; and cooling requirements
- Increased power density
Typical Applications
- Renewable energy Inverters
- High voltage DC/DC converters
- Switch Mode Power Supplies
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
Documents
Document Type | Document Name | Last Updated |
|---|---|---|
| Product Catalog | 05/2024 | |
| Sales Terms | 12/2021 |
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