1200 V Bare Die Silicon Carbide MOSFETs – Gen 3

Wolfspeed offers a family of 1200 V silicon carbide (SiC) MOSFETs that are optimized for use in high power applications such as Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, solar and energy storage systems, electric vehicle charging, high-voltage DC/DC converters and more. Based on the latest 3rd generation technology, Wolfspeed's 1200 V SiC MOSFETs include a range of on-resistance and package options that enable designers to select the right part for their applications. The 1200 V MOSFETs are designed for ultra-low RDS(ON) and increased CGS/CGD ratio for improved hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Pairing Wolfspeed's 1200 V SiC diodes with SiC MOSFETs creates a powerful combination of higher efficiency in demanding applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can help reduce system size, weight, design complexity and cost in most high-power applications. A range of top side and back side metallization options and die layouts provide flexibility to module designers in choice of assembly process and module layout.