Features
- 4th Generation SiC MOSFET
- High blocking voltage with low on-resistance
- High speed switching with low capacitance
- Soft body diode with low reverse recovery
- Low conduction losses over temperature
1200 V Bare Die Silicon Carbide MOSFETs – Gen 4
Wolfspeed's family of 1200 V SiC MOSFETs are optimized for use in high power applications
Wolfspeed offers a new family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as solar and energy storage systems, EV charging, Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, high-voltage DC/DC converters, and more. Based on a new technology generation, Wolfspeed's 1200 V SiC MOSFETs include a range of on-resistance options that enable designers to select the right part for their applications. The 1200 V MOSFETs are designed for ultra-low RDS(ON) and increased CGS/CGD ratio for improved hard-switching performance with lower turn-on losses possible within the safe operating area. Soft-switching applications can also benefit from the more linear COSS behavior. The efficiency gained by moving from a silicon-based solution to silicon carbide can help reduce system size, weight, design complexity, and cost in most high-power applications.
Parametric Data
1200 V Bare Die Silicon Carbide MOSFETs – Gen 4
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1200 V Bare Die Silicon Carbide MOSFETs – Gen 4
Product SKU | Buy Online | Data Sheet | Status | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Tjmax | Generation | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Active | 1200 V | 13.8 mΩ | 159 A | 251 nC | 212 pF | 1379 nC | 50 ns | 175 °C | Gen 4 | Automotive | |||
Active | 1200 V | 26 mΩ | 90 A | 136 nC | 110 pF | 590 nC | 56 ns | 175 °C | Gen 4 | Industrial | |||
Active | 1200 V | 42 mΩ | 55 A | 93 nC | 85 pF | 496 nC | 24 ns | 175 °C | Gen 4 | Industrial |
Product Details
Benefits
- Improves system efficiency with lower switching loss
- Reduces system size, weight, and cooling requirements
- Increased power density
- Easy to parallel and compatible with standard gate drive design
Typical Applications
- Renewable energy inverters
- High voltage DC/DC converters
- Off-board chargers
- Motor drives
Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name | Last Updated |
|---|---|---|
| Application Notes | 11/2023 | |
| Application Notes | 01/2023 | |
| Application Notes | 11/2021 | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
| 04/2024 |
| Sales Terms | 12/2021 |
Knowledge Center
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