Features
- 4th Generation SiC MOSFET
- High blocking voltage with low on-resistance
- High speed switching with low capacitance
- Soft body diode with low reverse recovery
- Low conduction losses over temperature
Product SKU | Buy Online | Data Sheet | Status | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Tjmax | Generation | Qualification |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CPM4-0120-0149JS0A | Active | 1200 V | 26 mΩ | 90 A | 136 nC | 110 pF | 590 nC | 56 ns | 175 °C | Gen 4 | Industrial |
Part Number | CPM4-0120-0149JS0A |
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Order Status | Active |
Buy Online | |
Container Type | Available in Film Frame and Tape & Reel |
Halogen Free | Yes |
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Lead Free | Yes |
RoHS Declaration | |
REACH Declaration | |
California Prop 65 | Learn More |
ECCN | EAR99 |
Document Type | Document Name | Last Updated |
---|---|---|
Data Sheets | 01/2024 | |
Application Notes | 01/2025 | |
Application Notes | 01/2025 | |
Application Notes | 11/2023 | |
Application Notes | 01/2023 | |
White Papers | 01/2025 | |
Product Catalog | 01/2025 | |
Sales Sheets & Flyers | 03/2022 | |
Sales Terms | Power Product Packing & Shipping Reference Guide This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
| 04/2024 |
Sales Terms | 12/2021 |