Features
- 4th Generation SiC MOSFET
- High blocking voltage with low on-resistance
- High speed switching with low capacitance
- Soft body diode with low reverse recovery
- Low conduction losses over temperature
Product SKU | Buy Online | Data Sheet | Status | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Tjmax | Generation | Qualification |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
EPM4-0120-0260JS0A New | Active | 1200 V | 13.8 mΩ | 159 A | 251 nC | 212 pF | 1379 nC | 50 ns | 175 °C | Gen 4 | Automotive |
Part Number | EPM4-0120-0260JS0A |
---|---|
Order Status | Active |
Buy Online | |
Container Type | Available in Film Frame and Tape & Reel |
Halogen Free | Yes |
---|---|
Lead Free | Yes |
RoHS Declaration | |
REACH Declaration | |
California Prop 65 | Learn More |
ECCN | EAR99 |
Document Type | Document Name | Last Updated |
---|---|---|
Application Notes | 11/2023 | |
Application Notes | 01/2023 | |
Application Notes | 11/2021 | |
Product Catalog | 05/2024 | |
Sales Sheets & Flyers | 03/2022 | |
Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
| 04/2024 |
Sales Terms | 12/2021 |