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Product rendering of a Wolfspeed Silicon Carbide Bare Die Schottky diode.

EPM4-0120-0260JS0A

1200 V, 13.8 mΩ, Gen 4, Automotive qualified, Bare Die SiC MOSFET

Parametric Data

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1200 V Bare Die Silicon Carbide Schottky Diodes – E-Series

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1200 V Bare Die Silicon Carbide Schottky Diodes – E-Series

Product SKU
Buy Online
Data Sheet
Status
Qualification
Blocking Voltage
Current Rating
Tjmax
Generation
EPM4-0120-0260JS0A
New
Active
Automotive
1200 V
159 A
175 °C
Gen 4

Ordering & Compliance

EPM4-0120-0260JS0A Ordering

Part NumberEPM4-0120-0260JS0A
Order StatusActive
Buy Online
Container TypeAvailable in Film Frame and Tape & Reel

EPM4-0120-0260JS0A Compliance

Halogen FreeYes
Lead FreeYes
RoHS Declaration
REACH Declaration
California Prop 65Learn More
ECCNEAR99

Product Details

Features
  • 1200-Volt Schottky Rectifier
  • Zero Forward and Reverse Recovery
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • Extremely Fast Switching
  • Positive temperature coefficient on VF
Benefits
  • Reduces system size; weight; and cooling requirements
  • Increased power density
  • Improved system efficiency at high switching frequencies
  • Parallel mode operation possible
Typical Applications
  • Fast EV charging
  • Traction inverter
  • Commercial vehicles
  • Solar systems
  • Switch Mode Power Supplies (SMPS)
  • UPS

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
Application Notes
11/2023
Application Notes
01/2023
Application Notes
11/2021
Product Catalog
05/2024
Sales Sheets & Flyers
03/2022
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021

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