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Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.

CPM3-1700-R020E

1700 V, 17.5 mΩ, Gen 3, Industrial qualified, Bare Die SiC MOSFET

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1700 V Industrial Qualified Bare Die Silicon Carbide MOSFETs – Gen 3

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1700 V Industrial Qualified Bare Die Silicon Carbide MOSFETs – Gen 3

Product SKU
Buy Online
Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Qualification
CPM3-1700-R020E
Active
1700 V
17.5 mΩ
120 A
249 nC
188 pF
2557 nC
43 ns
175 °C
Gen 3
Industrial

Ordering & Compliance

CPM3-1700-R020E Ordering

Order StatusActive
Buy Online
Container TypeAvailable in Film Frame and Tape & Reel

CPM3-1700-R020E Compliance

Halogen FreeYes
Lead FreeYes
RoHS Declaration
REACh Declaration
California Prop 65Learn More
ECCNEAR99

Product Details

Features
  • Industrial Qualified
  • High blocking voltage with industry leading low RDS(on) over temperature stability
  • Resistant to latch-up
  • High gate resistance for drives
Benefits
  • Improves System Efficiency with lower switching and conduction losses
  • Reduces System Size, Weight, and Cooling Requirements
  • Enables high switching frequency operation
  • Easy to parallel and compatible with standard gate drive design
Typical Applications
  • Trains traction
  • Solar power
  • Uninterruptible power system (UPS)
  • Wind power

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
Data Sheets
12/2023
Application Notes
04/2024
Application Notes
11/2023
Application Notes
01/2023
Application Notes
11/2021
Product Catalog
05/2024
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021

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