Features
- Enhanced 3rd Generation SiC MOSFET
- High blocking voltage with low on-resistance
- High speed switching with low capacitance
- Fast intrinsic diode with low reverse recovery
EPM3-1700-0900A
1700 V, 3.9 A, Gen 3 Bare Die SiC MOSFET
Parametric Data
1700 V Industrial Qualified Bare Die Silicon Carbide MOSFETs – Gen 3
No filters selected, showing all 1 products
1700 V Industrial Qualified Bare Die Silicon Carbide MOSFETs – Gen 3
Product SKU | Buy Online | Data Sheet | Status | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Tjmax | Generation | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
EPM3-1700-0900A New | Active | 1700 V | 900 mΩ | 3.9 A | 10 nC | 8 pF | 72 nC | 40 ns | 175 °C | Gen 3 | Automotive |
End of Section
Ordering & Compliance
EPM3-1700-0900A Ordering
| Order Status | Active |
|---|---|
| Buy Online | |
| Container Type | Available in Film Frame and Tape & Reel |
EPM3-1700-0900A Compliance
| Halogen Free | Yes |
|---|---|
| Lead Free | Yes |
| RoHS Declaration | |
| REACH Declaration | |
| California Prop 65 | Learn More |
| ECCN | EAR99 |
Product Details
Benefits
- Improves System Efficiency with lower switching and conduction losses
- Reduces System Size, Weight, and Cooling Requirements
- Enables high switching frequency operation
- Easy to parallel and compatible with standard gate drive design
Applications
- Auxiliary Power Supplies
- OBC & DC/DC Converters
- Solar – Residential Applications
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name | Last Updated |
|---|---|---|
| Application Notes | 01/2025 | |
| Application Notes | 01/2025 | |
| Application Notes | 04/2024 | |
| Application Notes | 11/2023 | |
| Application Notes | 01/2023 | |
| Sales Sheets & Flyers | 03/2022 | |
| Sales Terms | 12/2021 |