Features
- Minimum of 900V Vbr across entire operating temperature range
- High blocking voltage with low RDS(on)
- Fast intrinsic diode with low reverse recovery charge (Qrr)
- High-speed switching with low output capacitance
Product SKU | Buy Online | Data Sheet | Status | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Tjmax | Generation | Qualification |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Active | 900 V | 10 mΩ | 194 A | 210 nC | 360 pF | 1300 nC | 36 ns | 175 °C | Gen 3 | Industrial | |||
Last Time Buy | 900 V | 30 mΩ | 66 A | 87 nC | 137 pF | 545 nC | 62 ns | 175 °C | Gen 3 | Industrial | |||
Last Time Buy | 900 V | 65 mΩ | 32 A | 33 nC | 70 pF | 220 nC | 22 ns | 175 °C | Gen 3 | Industrial |
Document Type | Document Name | Last Updated |
---|---|---|
Application Notes | 01/2025 | |
Application Notes | 01/2025 | |
Application Notes | 11/2023 | |
Application Notes | 01/2023 | |
Product Catalog | 01/2025 | |
Sales Terms | Power Product Packing & Shipping Reference Guide This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
| 04/2024 |
Sales Terms | 12/2021 |