Features
- Minimum of 900V Vbr across entire operating temperature range
- High blocking voltage with low RDS(on)
- Fast intrinsic diode with low reverse recovery charge (Qrr)
- High-speed switching with low output capacitance
Product SKU | Buy Online | Data Sheet | Status | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Tjmax | Generation | Qualification |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Active | 900 V | 10 mΩ | 194 A | 210 nC | 360 pF | 1300 nC | 36 ns | 175 °C | Gen 3 | Industrial | |||
Last Time Buy | 900 V | 30 mΩ | 66 A | 87 nC | 137 pF | 545 nC | 62 ns | 175 °C | Gen 3 | Industrial | |||
Last Time Buy | 900 V | 65 mΩ | 32 A | 33 nC | 70 pF | 220 nC | 22 ns | 175 °C | Gen 3 | Industrial |
Document Type | Document Name | Last Updated |
---|---|---|
Application Notes | 11/2023 | |
Application Notes | 01/2023 | |
Application Notes | 11/2021 | |
Product Catalog | 05/2024 | |
Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
| 04/2024 |
Sales Terms | 12/2021 |