Features
- Robust intrinsic diode with low reverse recovery charge (Qrr)
- High-speed switching with low output capacitance
- Low conduction losses over temperature
- Avalanche ruggedness
Product SKU | Buy Online | Data Sheet | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Maximum Junction Temperature | Generation | Status |
---|---|---|---|---|---|---|---|---|---|---|---|---|
CPM2-1200-0080A | 1200 V | 80 mΩ | 36 A | 71 nC | 92 pF | 152 nC | 24 ns | 175 °C | Gen 2 | NRND |
Document Type | Document Name | Last Updated |
---|---|---|
Data Sheets | 12/2023 | |
Application Notes | 11/2023 | |
Application Notes | 01/2023 | |
Application Notes | 11/2021 | |
Product Catalog | 05/2024 | |
Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
| 04/2024 |
Sales Terms | 12/2021 |