Features
- Low On-State Resistance over Temperature
- Low Parasitic Capacitances
- Fast Diode with ultra low reverse recovery
- High Temperature Operation (Tj = 175°C)
Product SKU | Buy Online | Data Sheet | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Maximum Junction Temperature | Generation | Status |
---|---|---|---|---|---|---|---|---|---|---|---|---|
CPM3-0650-0015A | 650 V | 15 mΩ | 120 A | 190 nC | 290 pF | 510 nC | 22 ns | 175 °C | Gen 3 | Active |
Document Type | Document Name | Last Updated |
---|---|---|
Application Notes | 11/2023 | |
Application Notes | 01/2023 | |
Application Notes | 11/2021 | |
Product Catalog | 05/2024 | |
Sales Sheets & Flyers | 03/2022 | |
Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
| 04/2024 |
Sales Terms | 12/2021 |