1000 V Silicon Carbide (SiC) power MOSFETs for fast switching power devices
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Wolfspeed offers a series of 1000 V Silicon Carbide (SiC) MOSFETs optimized for fast switching devices such as electric-vehicle charging systems; industrial power supplies; and renewable energy systems.
The 1000 V Silicon Carbide MOSFETs address many power design challenges by providing a unique device with low on-Resistance; very low output capacitance; and low source inductance for a perfect blend of low switching losses and low conduction losses. Compared to silicon-based solutions; Wolfspeed silicon carbide power device technology enables increased system power density; higher switching frequencies; reduced component-count; and reduced size of components like inductors; capacitors; filters & transformers.
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1000 V Discrete Silicon Carbide MOSFETs
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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Accelerate and de-risk the silicon carbide design process for three-phase industrial motor drives and meet leading efficiency standards with the SpeedVal™ Kit Three-Phase Motherboard.