Features
- Stable RDS(ON) over temperature
- Available in package options with separate Kelvin source pin
- Extremely fast switching
- Reduction of heat-sink requirements
C3M0032120J1
1200 V, 32 mΩ, TO-263-7 XL package, Industrial qualified, Discrete SiC MOSFET
Parametric Data
1200 V Discrete Silicon Carbide MOSFETs
Ordering & Compliance
C3M0032120J1 Ordering
C3M0032120J1 Compliance
| Halogen Free | Yes |
|---|---|
| RoHS Declaration | |
| REACH Declaration | |
| California Prop 65 | Learn More |
| ECCN | EAR99 |
| Moisture Sensitivity Level | MSL 2 |
Related Documents
C3M0032120J1 Related Documents
| Soldering & Handling | |
|---|---|
| Packing & Shipping |
Product Details
Benefits
- Easier to drive (+15V gate drive)
- Improved system-level efficiency
- Rugged body diode (no need for external diode)
- Avalanche ruggedness
Typical Applications
- Solar inverters and energy storage
- Onboard and fast DC EV-Charging Systems
- Motor control and drives
- Welding and inductive heating
- Auxiliary power supplies
- High-voltage DC/DC converters
Featured Resources
Technical Support
Featured Application Notes
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name | Last Updated |
|---|---|---|
| Data Sheets | 12/2023 | |
| Application Notes | 09/2024 | |
| Application Notes | 07/2024 | |
| Application Notes | 01/2024 | |
| Application Notes | 01/2024 | |
| Application Notes | 11/2023 | |
| Application Notes | 05/2023 | |
| Application Notes | 01/2023 | |
| Application Notes | 09/2022 | |
| Application Notes | 02/2022 | |
| Application Notes | 11/2021 | |
| Test Report | 03/2022 | |
| Product Catalog | 05/2024 | |
| Sales Sheets & Flyers | 06/2023 | |
| Sales Sheets & Flyers | 03/2022 | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
| 04/2024 |
| Sales Terms | 12/2021 |
Knowledge Center
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