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Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

C3M0900170J

1700 V, 900 mΩ, TO-263-7 package, Discrete Silicon Carbide (SiC) MOSFET
Note Coming Soon.

Parametric Data

Display All SKUs in Product Family (7)

1700 V Discrete Silicon Carbide MOSFETs

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1700 V Discrete Silicon Carbide MOSFETs

Product SKU
Buy Online
Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Tjmax
Package
Qualification
C3M0900170J
Coming
Soon
Coming Soon
1700 V
900 mΩ
6.3 A
175 °C
TO-263-7
Industrial

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Ordering & Compliance

C3M0900170J Ordering

Part Number
C3M0900170J
Coming
Soon
C3M0900170J-TR
Order StatusComing SoonComing Soon
Buy Online
PackageTO-263-7TO-263-7 T&R
Container TypeTubeTape & Reel
Container Qty.502000
Standard Packing Qty.10002000
Minimum Order Qty.10002000

C3M0900170J Compliance

California Prop 65Learn More
ECCN
EAR99

Related Documents

C3M0900170J Related Documents

Soldering & Handling
Packing & Shipping

Product Details

Features

  • 12-15V gate drive voltage
  • 0V turn-off voltage when used in flyback applications
  • High speed switching with low capacitances
  • Wide creepage and clearance distance between drain and source

Benefits

  • Higher system efficiency and power density
  • Supply multiple 12-48V devices with reduced cooling requiremetns
  • Higher switching frequency

Typical Applications

  • Auxiliary power supplies
  • Switch mode power supplies
  • Power inverters
  • 1500V based systems
  • High-voltage DC/DC converters
  • Motor Drives
  • Pulsed power applications

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
Application Notes
01/2025
Application Notes
01/2025
Application Notes
09/2024
Application Notes
07/2024
Application Notes
01/2024
Application Notes
01/2024
Application Notes
12/2023
Application Notes
11/2023
Application Notes
05/2023
Application Notes
01/2023
Application Notes
09/2022
White Papers
11/2024
Product Catalog
01/2025
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021

Knowledge Center

Design Resources

Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications

Continue Reading  White Paper

Support

Technical SupportPower Applications Forum

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