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Isometric view of the Wolfspeed Half-Bridge DM Power Module.

DM Half-Bridge Power Module Family

Designed to offer high current capability in a small and light form factor.
Wolfspeed's DM module family is designed to offer high current capability in a very low mass and low volume form factor. DM allows designers to develop high power density Silicon Carbide converters for weight and space constrained applications. The optimized packaging enables 175°C continuous junction operation, with a high reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness and a lightweight AlSiC baseplate.

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DM Half-Bridge Power Module Family

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DM Half-Bridge Power Module Family

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Data Sheet
Status
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Tjmax
Module Size
Qualification
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CAB003M09DM3
Active
DM
Half-Bridge
900 V
350 A
2.5 mΩ
Gen 3 MOS
175 °C
51.6 mm x 40.8 mm
Industrial

Product Details

Features
  • High power density footprint
  • Ultra low mass (41 g)
  • High junction temperature (175 °C) operation
  • Implements Wolfspeed’s Third Generation SiC MOSFET Technology
Benefits
  • Enables compact, lightweight power conversion systems
  • Increased system efficiency
  • Reduced thermal requirements and system cost
Typical Applications
  • E-Mobility Inverters
  • EV Chargers
  • High-Efficiency Converters / Inverters
  • Renewable Energy

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
User Guide
10/2024
User Guide
12/2023
Application Notes
07/2024
Application Notes
07/2024
Application Notes
03/2024
Application Notes
01/2024
Application Notes
01/2024
Application Notes
01/2024
Application Notes
12/2023
Application Notes
11/2023
Application Notes
08/2023
Application Notes
05/2023
Application Notes
01/2023
Application Notes
02/2022
Sales Terms
12/2021

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