Features
- High power density footprint
- Ultra low mass (41 g)
- High junction temperature (175 °C) operation
- Implements Wolfspeed’s Third Generation SiC MOSFET Technology
Product SKU | Buy Online | Request Sample | Data Sheet | Status | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Tjmax | Module Size | Qualification | View Product |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CAB003M09DM3 New | Active | DM | Half-Bridge | 900 V | 350 A | 2.5 mΩ | Gen 3 MOS | 175 °C | 51.6 mm x 40.8 mm | Industrial |
Document Type | Document Name | Last Updated |
---|---|---|
User Guide | 10/2024 | |
User Guide | 12/2023 | |
Application Notes | 07/2024 | |
Application Notes | 07/2024 | |
Application Notes | 03/2024 | |
Application Notes | 01/2024 | |
Application Notes | 01/2024 | |
Application Notes | 01/2024 | |
Application Notes | 12/2023 | |
Application Notes | 11/2023 | |
Application Notes | 08/2023 | |
Application Notes | 05/2023 | |
Application Notes | 01/2023 | |
Application Notes | 02/2022 | |
Sales Terms | 12/2021 |