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  • HM Power Module Family

HM Power Module Family

1200 V & 1700 V Half-Bridge Power Module Footprint Designed for Ultra-High Power Density
Wolfspeed has developed the HM power module platform to provide the benefits of Silicon Carbide (SiC) in power density sensitive applications; while maintaining the baseplate compatibility of a 62mm module. The HM platform’s Silicon Carbide optimized packaging enables 175°C continuous junction operation; with a high-reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions and a lightweight AlSiC baseplate. The HM3 is a perfect fit for demanding applications such as industrial test equipment, medical power supplies, aerospace and traction drives.
  • Overview
  • Parametric Data
  • Product Details
  • Featured Resources
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  • Overview
  • Parametric Data
  • Product Details
  • Featured Resources
  • Tools & Support

Parametric Data

HM Power Module Family

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HM Power Module Family - Filter By

HM Power Module Family

Product SKU
Buy Online
Data Sheet
CAD Model
Status
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Tjmax
Module Size
Qualification
CAB760M12HM3R
Active
HM
Half-Bridge Right GK for Paralleling
1200 V
1.33 mΩ
Gen 3 MOS
175 °C
110 x 65 x 12.2 mm
Industrial
CAS480M12HM3
Active
HM
Half-Bridge
1200 V
480 A
2.29 mΩ
Gen 3 MOS + Diodes
175 °C
110 x 65 x 12.2 mm
Industrial
CAR600M12HN6
Active
HM
Half-Bridge Rectifier
1200 V
600 A
Gen 6
175 °C
110 x 65 x 12.2 mm
Industrial
CAB760M12HM3
Active
HM
Half-Bridge
1200 V
760 A
1.33 mΩ
Gen 3 MOS
175 °C
110 x 65 x 12.2 mm
Industrial
CAS380M17HM3
Active
HM
Half-Bridge
1700 V
380 A
3.3 mΩ
Gen 3 MOS + Diodes
175 °C
110 x 65 x 12.2 mm
Industrial
CAB500M17HM3
Active
HM
Half-Bridge
1700 V
500 A
2.5 mΩ
Gen 3 MOS
175 °C
110 x 65 x 12.2 mm
Industrial
CAR600M17HN6
Active
HM
Half-Bridge Rectifier
1700 V
600 A
Gen 6
175 °C
110 x 65 x 12.2 mm
Industrial
CAB650M17HM3
Active
HM
Half-Bridge
1700 V
650 A
1.67 mΩ
Gen 3 MOS
175 °C
110 x 65 x 12.2 mm
Industrial

End of Section

Product Details

Features

  • High Performance 62mm Footprint
  • Low Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced Losses
  • High Junction Temperature (175 °C) Operation
  • Configurations Available with both Second & Third Generation SiC MOSFETs
  • Lightweight AlSiC Baseplate
  • Silicon Nitride Insulator for Robust Thermal Cycling Capability

Benefits

  • Lightweight; Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit
  • Increased System Efficiency; due to Low Switching & Conduction Losses of Silicon Carbide
  • High-Reliability Material Selection enabling High-Temperature Operation

Typical Applications

  • Railway & Traction
  • Solar & Renewable Energy
  • EV Chargers
  • Industrial Automation & Testing
  • Medical Power Supplies
  • Motor Drives

Featured Resources

Design Tools

SpeedFit Design SimulatorLTspice & PLECS Models

Technical Support

Power Applications Forum

Featured Documents

PRD-08333: Wolfspeed Module CIL Evaluation Kits User Guide
PRD-07933: Power Module Thermal Interface Material Application User Guide
PRD-07913: Wolfspeed Power Module SPICE Models User Guide

Tools & Support

  • Technical & Sales Documents
  • Tools & Support
  • Compliance

Documents

Document Type
Document Name
Last Updated
Data Sheets
CAB760M12HM3R
07/2024
Data Sheets
CAB500M17HM3
07/2024
Data Sheets
CAB650M17HM3
07/2024
Data Sheets
CAS380M17HM3
07/2024
Data Sheets
CAB760M12HM3
07/2024
Data Sheets
CAS480M12HM3
07/2024
Data Sheets
CAR600M12HN6
06/2024
Data Sheets
CAR600M17HN6
06/2024
User Guide
PRD-08333: Wolfspeed Module CIL Evaluation Kits User Guide
03/2025
User Guide
PRD-07933: Power Module Thermal Interface Material Application User Guide
03/2025
User Guide
PRD-09035: Wolfspeed Power Module RC Thermal Models User Guide
New
01/2025
Design Files
KIT-CRD-CIL12N-HM3 ALL Design Files
06/2020
Application Notes
PRD-07845: Power Module Baseplate Capacitance and Electromagnetic Compatibility
03/2025
Application Notes
PRD-08911: Considerations for Current Balancing in Paralleled SiC Power Modules
New
01/2025
Application Notes
PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies
01/2025
Application Notes
PRD-08907: Mitigating EMI with SiC Solutions in Renewable Energy & Grid-Connected Power Converters
New
01/2025
Application Notes
PRD-08710: Measuring Stray Inductance in Power Electronics Systems
07/2024
Application Notes
PRD-08734: Understanding and Simulating Parasitic Inductance in Silicon Carbide Systems
07/2024
Application Notes
PRD-08376: Thermal Characterization Methods and Applications
01/2024
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events
11/2023
Application Notes
PRD-06379: Environmental Considerations for Power Electronics Systems
08/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on
01/2023
Videos
How to Simulate Silicon Carbide Power Module Performance with LTSpice
11/2023
White Papers
Driving Industrial E-Mobility With Silicon Carbide Semiconductors
11/2024
Product Catalog
Power Product Line Card
01/2025

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