Features
- High Performance 62mm Footprint
- Low Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced Losses
- High Junction Temperature (175 °C) Operation
- Configurations Available with both Second & Third Generation SiC MOSFETs
- Lightweight AlSiC Baseplate
- Silicon Nitride Insulator for Robust Thermal Cycling Capability