Features
- Low forward voltage (Vf) drop over temperature
- Zero reverse-recovery charge for fast switching operations
- Robust MPS technology
- High reverse-voltage blocking capability
C3D08060G
600 V, 8 A, TO-263-2 package, Industrial qualified, Discrete SiC Schottky Diode
Parametric Data
600 V Discrete Silicon Carbide Schottky Diodes
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Ordering & Compliance
C3D08060G Ordering
C3D08060G Compliance
| Halogen Free | Yes |
|---|---|
| RoHS Declaration | |
| REACH Declaration | |
| California Prop 65 | Learn More |
| ECCN | EAR99 |
| Moisture Sensitivity Level | MSL 3 |
Related Documents
C3D08060G Related Documents
| Soldering & Handling | |
|---|---|
| Packing & Shipping |
Product Details
Benefits
- Improves System Efficiency with lower conduction losses
- Enables high switching frequency operation
- Improves System Level Power Density
- Reduces System Size; Weight; and Cooling Requirements
Typical Applications
- Industrial Power Supplies
- Server/Telecom
- EV-Charging Systems
- Energy Storage Systems (ESS)
- Uninterruptible Power Supplies (UPS)
- Battery Management Systems (BMS)
Featured Resources
Design Tools
Technical Support
Featured Application Notes
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name | Last Updated |
|---|---|---|
| Data Sheets | 11/2024 | |
| Application Notes | 07/2024 | |
| Application Notes | 05/2023 | |
| Application Notes | 09/2022 | |
| Application Notes | 02/2022 | |
| Application Notes | 09/2015 | |
| Product Catalog | 05/2024 | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
| 04/2024 |
| Sales Terms | 12/2021 |
Knowledge Center
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