The Wolfspeed WolfPACK power module family is designed to give engineers choice and flexibility when working on power electronics applications greater than 10 kW.
In addition to half-bridge and six-pack topologies, WolfPACK modules are now available in full-bridge configurations—all with the option for pre-applied Honeywell™ PTM6000 Series TIM.
Selecting pre-applied TIM can reduce assembly cost and complexity, while improving reliability and performance. Compared to standard grease solutions, WolfPACK modules with pre-applied TIM can reduce the junction temperature by 40°C under the same conditions or increase current capability by 60% due to the reduction in thermal resistance.
All WolfPACK modules are designed to provide clean, reliable power for energy conversion systems. By leveraging more than 35 years of vertically integrated industry experience, Wolfspeed ensures that these modules offer low losses in a package that lends itself to fast design implementation, scalability, long term design support, and lower assembly overhead.
Ready to get started? Request your sample or buy online now.
WolfPACK modules are highly flexible, making them well-suited to a wide variety of applications with power levels from 10 to 150+ kW, including:
Product SKU | Buy Online | Request Sample | Data Sheet | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Tjmax | Module Size |
|---|---|---|---|---|---|---|---|---|---|---|---|
CAB5R0A23GM4 New | GM | Half Bridge (AlN substrate) | 2300 V | 200 A | 5 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | |||
GM | Half Bridge (AlN substrate) | 2300 V | 200 A | 5 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||
GM | Half-Bridge | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||
GM | Half Bridge (AlN substrate) | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||
GM | Half-Bridge | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||
GM | Half Bridge (AlN substrate) | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||
CAB6R0A23GM4 New | GM | Half Bridge (AlN substrate) | 2300 V | 200 A | 6 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | |||
GM | Half Bridge (AlN substrate) | 2300 V | 200 A | 6 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||
CAB7R5A23GM4 New | GM | Half Bridge (AlN substrate) | 2300 V | 170 A | 7.5 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | |||
GM | Half Bridge (AlN substrate) | 2300 V | 170 A | 7.5 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||
GM | Half Bridge (AlN substrate) | 1200 V | 181 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||
GM | Half-Bridge | 1200 V | 160 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||
GM | Half-Bridge | 1200 V | 160 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||
GM | Half Bridge (AlN substrate) | 1200 V | 181 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||
FM | Half-Bridge | 1200 V | 117 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||
FM | Half-Bridge | 1200 V | 117 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||
GM | Half-Bridge | 1200 V | 141 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||
GM | Half-Bridge | 1200 V | 141 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||
FM | Half-Bridge | 1200 V | 84 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||
FM | Half-Bridge | 1200 V | 84 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||
GM | Six-pack (three-phase) | 1200 V | 50 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||
GM | Six-pack (three-phase) | 1200 V | 50 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||
FM | Six-pack (three-phase) | 1200 V | 30 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||
FM | Full-Bridge | 1200 V | 48 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||
FM | Six-pack (three-phase) | 1200 V | 30 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||
FM | Full-Bridge | 1200 V | 48 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||
FM | Six-pack (three-phase) | 1200 V | 30 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||
FM | Full-Bridge | 1200 V | 37 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||
FM | Six-pack (three-phase) | 1200 V | 30 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||
FM | Full-Bridge | 1200 V | 37 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm |
Perform characterization in your own lab using Wolfspeed’s clamped inductive load (CIL) boards to better understand the capability of our silicon carbide modules under your application conditions.
Name | Buy Online | Form | Package | Designed By | Product SKU | View Product |
|---|---|---|---|---|---|---|
Evaluation Tool | FM | Wolfspeed | KIT-CRD-CIL12N-FMA | |||
Evaluation Tool | FM | Wolfspeed | KIT-CRD-CIL12N-FMC | |||
Evaluation Tool | GM | Wolfspeed | KIT-CRD-CIL12N-GMA | |||
Evaluation Tool | FM | Wolfspeed | KIT-CRD-CIL12N-FMB | |||
Transceiver | Wolfspeed | CGD12HB00D |
Get started faster with time-saving reference designs for inverters, motors drives, and active front ends.
Product SKU | Name | Buy Online | Type | Topology | Power | Discrete/Module | Package | Device SKU(s) | Designed By | View Product |
|---|---|---|---|---|---|---|---|---|---|---|
AC to DC, DC to AC | Passive Rectifier and Three-Phase, 2-Level | 7.5kW | Module | FM | Wolfspeed | |||||
DC to AC | Three-Phase, 2-Level | 25kW | Module | FM | Wolfspeed |
Evaluate compatible gate drive solutions from our partners to find the right fit.
Product SKU | Buy Online | Platform | Designed By | Gate Driver | Output Channels | Gate Power | Miller Clamp | Short-Circuit Protection | Temperature Feedback | Interface Tool | View Product |
|---|---|---|---|---|---|---|---|---|---|---|---|
FM, GM | Skyworks | 2 | 1W | No | No | Yes | |||||
FM, GM, SpeedVal Kit | Analog Devices | 2 | 2W | Yes | Yes | Yes | |||||
FM, GM, SpeedVal Kit | Wolfspeed | 2 | 2W | Yes | Yes | Yes |
