![An electrician works on low voltage cabinet representing how Wolfspeed’s MOSFETs and diodes pack more backup power into a single enclosure.](/static/d7dc0a2c70e152d3fc75c42e2731768c/e95a8/uninterrupted-power-supply.jpg)
Uninterruptible Power Supplies
Future-proof your next UPS with Wolfspeed’s next-gen wide bandgap SiC semiconductors.
Improved Reliability, Cleaner Power from Wolfspeed Silicon Carbide
For mission-critical systems, a power loss can be truly catastrophic, and having a reliable backup power source is absolutely essential.
At one end of the spectrum is a simple standby battery backup that powers a home computer long enough to enable a safe shutdown. At the other end are complex, mission-critical IT systems that require customized, redundant, double-conversion uninterruptible power supply (UPS) technologies that convert AC from the grid to an DC source that keeps the batteries charged. That DC source is also converted back to AC to power 100% of the system, allowing for zero transfer time during an interruption, and since the DC source is isolated from the grid the AC signal is clean and immune from any grid instability.
Solutions for UPS Design
UPS systems need to be able to provide reliable, clean power at any moment — and every percent of efficiency improvement means longer backup time. Wolfspeed’s Silicon Carbide MOSFETs and Schottky diodes enable 30% lower losses, has 15% system cost saving, and up to 50% higher power density than their silicon counterparts. The results are UPS systems that you can rely on when you need them the most, packing more backup power into a single enclosure, or into smaller and lighter systems for space-constrained environments.
The Numbers are on Your Side.
Wolfspeed Silicon Carbide is uniquely capable of incredible reliability and efficiency, even in the most demanding power applications.
Wolfspeed Silicon Carbide Components for UPS Systems
UPS systems must often deliver high currents with pin-point precision at a moment’s notice. That’s no easy task, but Wolfspeed’s Silicon Carbide MOSFET and Schottky diode products are up for the challenge.
XM3 Half-Bridge Silicon Carbide Power Module Family
XM3 Half-Bridge Silicon Carbide Power Module Family
XM3 Half-Bridge Silicon Carbide Power Module Family - Filter By
XM3 Half-Bridge Silicon Carbide Power Module Family
Product SKU | Buy Online | Data Sheet | CAD Model | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Tjmax | Module Size | View Product |
---|---|---|---|---|---|---|---|---|---|---|---|---|
XM | Half-Bridge | 1700 V | 320 A | 3.5 mΩ | Gen 3 | 175 °C | 80 x 53 x 19 mm | |||||
XM | Half-Bridge | 1200 V | 400 A | 4 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm | |||||
XM | Half-Bridge | 1200 V | 425 A | 3.2 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm | |||||
XM | Half-Bridge | 1200 V | 450 A | 2.6 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm | |||||
XM | Half-Bridge | 1200 V | 450 A | 2.6 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm |
Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family
Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family
Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family - Filter By
Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Tjmax | Module Size | View Product |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GM | Half-Bridge | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM | Half Bridge (AlN substrate) | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM | Half-Bridge | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM | Half Bridge (AlN substrate) | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM | Half Bridge (AlN substrate) | 1200 V | 181 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM | Half-Bridge | 1200 V | 160 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM | Half-Bridge | 1200 V | 160 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM | Half Bridge (AlN substrate) | 1200 V | 181 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
FM | Half-Bridge | 1200 V | 117 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM | Half-Bridge | 1200 V | 117 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
GM | Half-Bridge | 1200 V | 141 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM | Half-Bridge | 1200 V | 141 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
FM | Half-Bridge | 1200 V | 84 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM | Half-Bridge | 1200 V | 84 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
GM | Six-pack (three-phase) | 1200 V | 50 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM | Six-pack (three-phase) | 1200 V | 50 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
FM | Six-pack (three-phase) | 1200 V | 30 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM | Full-Bridge | 1200 V | 48 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM | Six-pack (three-phase) | 1200 V | 30 A | 21 mΩ | Gen 3 | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM | Full-Bridge | 1200 V | 48 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM | Six-pack (three-phase) | 1200 V | 30 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM | Full-Bridge | 1200 V | 37 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM | Six-pack (three-phase) | 1200 V | 30 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM | Full-Bridge | 1200 V | 37 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm |
62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules
62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules
62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules - Filter By
62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules
Product SKU | Buy Online | Data Sheet | CAD Model | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Tjmax | Module Size | View Product |
---|---|---|---|---|---|---|---|---|---|---|---|---|
62 mm | Half-Bridge | 1200 V | 175 A | 8 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | |||||
62 mm | Half-Bridge | 1200 V | 175 A | 8 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | |||||
HAS175M12BM3 New | 62 mm | Half-Bridge | 1200 V | 175 A | 8 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | ||||
62 mm | Half-Bridge | 1200 V | 300 A | 4 mΩ | Gen 3 MOS | 175 °C | 105 x 62 x 31 mm | |||||
62 mm | Half-Bridge | 1700 V | 310 A | 4.29 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | |||||
62 mm | Half-Bridge | 1700 V | 310 A | 4.29 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | |||||
HAS310M17BM3 New | 62 mm | Half-Bridge | 1700 V | 310 A | 4.29 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | ||||
62 mm | Half-Bridge | 1200 V | 350 A | 4 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | |||||
62 mm | Half-Bridge | 1200 V | 350 A | 4 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | |||||
HAS350M12BM3 New | 62 mm | Half-Bridge | 1200 V | 350 A | 4 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | ||||
62 mm | Half-Bridge | 1200 V | 400 A | 3.25 mΩ | Gen 3 MOS | 175 °C | 105 x 62 x 31 mm | |||||
62 mm | Half-Bridge | 1200 V | 530 A | 2.6 mΩ | Gen 3 MOS | 150 °C | 105 x 62 x 31 mm | |||||
62 mm | Half-Bridge | 1200 V | 530 A | 2.6 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | |||||
62 mm | Half-Bridge | 1200 V | 530 A | 2.6 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | |||||
HAS530M12BM3 New | 62 mm | Half-Bridge | 1200 V | 530 A | 2.67 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm |
HM Silicon Carbide Power Module Family
HM Silicon Carbide Power Module Family
HM Silicon Carbide Power Module Family - Filter By
HM Silicon Carbide Power Module Family
Product SKU | Buy Online | Data Sheet | CAD Model | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Tjmax | Module Size | View Product |
---|---|---|---|---|---|---|---|---|---|---|---|---|
HM | Half-Bridge Right GK for Paralleling | 1200 V | 1.33 mΩ | Gen 3 MOS | 175 °C | 110 mm x 65 mm x 12.2 mm | ||||||
HM | Half-Bridge Rectifier | 1200 V | 600 A | Gen 6 | 175 °C | 110 mm x 65 mm x 12.2 mm | ||||||
HM | Half-Bridge Rectifier | 1700 V | 600 A | Gen 6 | 175 °C | 110 mm x 65 mm x 12.2 mm | ||||||
HM | Half-Bridge | 1700 V | 500 A | 2.5 mΩ | Gen 3 MOS | 175 °C | 110 mm x 65 mm x 12.2 mm | |||||
HM | Half-Bridge | 1700 V | 650 A | 1.67 mΩ | Gen 3 MOS | 175 °C | 110 mm x 65 mm x 12.2 mm | |||||
HM | Half-Bridge | 1700 V | 380 A | 3.3 mΩ | Gen 3 MOS + Diodes | 175 °C | 110 mm x 65 mm x 12.2 mm | |||||
HM | Half-Bridge | 1200 V | 760 A | 1.33 mΩ | Gen 3 MOS | 175 °C | 110 mm x 65 mm x 12.2 mm | |||||
HM | Half-Bridge | 1200 V | 480 A | 2.29 mΩ | Gen 3 MOS + Diodes | 175 °C | 110 mm x 65 mm x 12.2 mm |
1200V Discrete Silicon Carbide MOSFETs for UPS
1200V Discrete Silicon Carbide MOSFETs for UPS
1200V Discrete Silicon Carbide MOSFETs for UPS - Filter By
1200V Discrete Silicon Carbide MOSFETs for UPS
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | RDS(ON) at 25°C | Generation | Current Rating | Gate Charge Total | Output Capacitance | Total Power Dissipation (PTOT) | Tjmax | Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1200 V | 75 mΩ | Gen 3 | 30 A | 51 nC | 58 pF | 113.6 W | 150 °C | TO-263-7 | |||||
1200 V | 75 mΩ | Gen 3 | 30 A | 54 nC | 58 pF | 113.6 W | 150 °C | TO-247-3 | |||||
1200 V | 75 mΩ | Gen 3 | 32 A | 57 nC | 58 pF | 145 W | 175 °C | TO-247-3 | |||||
1200 V | 75 mΩ | Gen 3 | 32 A | 55 nC | 58 pF | 145 W | 175 °C | TO-247-4 | |||||
1200 V | 32 mΩ | Gen 3 | 63 A | 118 nC | 129 pF | 283 W | 175 °C | TO-247-4 | |||||
1200 V | 32 mΩ | Gen 3 | 63 A | 114 nC | 129 pF | 283 W | 175 °C | TO-247-3 | |||||
1200 V | 40 mΩ | Gen 3 | 64 A | 61 nC | 94 pF | 272 W | 150 °C | TO-263-7 XL | |||||
1200 V | 40 mΩ | Gen 3 | 66 A | 99 nC | 103 pF | 326 W | 175 °C | TO-247-4 | |||||
1200 V | 40 mΩ | Gen 3 | 66 A | 101 nC | 103 pF | 326 W | 175 °C | TO-247-3 | |||||
1200 V | 32 mΩ | Gen 3 | 68 A | 111 nC | 133 pF | 277 W | 150 °C | TO-263-7 XL | |||||
1200 V | 21 mΩ | Gen 3 | 81 A | 160 nC | 180 pF | 469 W | 175 °C | TO-247-3 | |||||
1200 V | 21 mΩ | Gen 3 | 100 A | 162 nC | 180 pF | 469 W | 175 °C | TO-247-4 | |||||
1200 V | 16 mΩ | Gen 3 | 115 A | 211 nC | 230 pF | 556 W | 175 °C | TO-247-4 | |||||
1200 V | 16 mΩ | Gen 3 | 115 A | 207 nC | 230 pF | 556 W | 175 °C | TO-247-3 |
1200V Discrete Silicon Carbide Schottky Diodes for UPS
1200V Discrete Silicon Carbide Schottky Diodes for UPS
1200V Discrete Silicon Carbide Schottky Diodes for UPS - Filter By
1200V Discrete Silicon Carbide Schottky Diodes for UPS
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | Current Rating | Generation | Forward Voltage(VF(type)) | Maximum Continuous Current (IF) | Total Capacitive Charge (QC (typ)) | Total Power Dissipation (PTOT) | Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|
1200 V | 10 A | Gen 4 | 1.5 V | 10 A | 52 nC | 136 W | TO-220-2 | |||||
1200 V | 10 A | Gen 4 | 1.4 V | 10 A | 54 nC | 187 W | TO-247-3 | |||||
1200 V | 10 A | Gen 4 | 1.5 V | 10 A | 52 nC per leg | 170 W | TO-252-2 | |||||
1200 V | 10 A | Gen 4 | 1.4 V | 10 A | 52 nC | 136 W | TO-247-2 | |||||
1200 V | 15 A | Gen 4 | 1.6 V | 15 A | 77.5 nC | 192 W | TO-220-2 | |||||
1200 V | 15 A | Gen 4 | 1.5 V | 15 A | 37 nC per leg | 270 W | TO-247-3 | |||||
1200 V | 15 A | Gen 4 | 1.5 V | 15 A | 77.5 nC | 174.5 W | TO-247-2 | |||||
1200 V | 20 A | Gen 4 | 1.5 V | 20 A | 99 nC | 242 W | TO-220-2 | |||||
1200 V | 20 A | Gen 4 | 1.5 V per leg | 20 A | 52 nC per leg | 352 W | TO-247-3 | |||||
1200 V | 20 A | Gen 4 | 1.5 V | 20 A | 99 nC | 246 W | TO-247-2 | |||||
1200 V | 30 A | Gen 4 | 1.6 V per leg | 30 A | 77.5 nC per leg | 440 W | TO-247-3 | |||||
1200 V | 40 A | Gen 4 | 1.5 V per leg | 40 A | 99 nC per leg | 532 W | TO-247-3 |
650V Discrete Silicon Carbide MOSFETs for UPS
650V Discrete Silicon Carbide MOSFETs for UPS
650V Discrete Silicon Carbide MOSFETs for UPS - Filter By
650V Discrete Silicon Carbide MOSFETs for UPS
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | RDS(ON) at 25°C | Generation | Current Rating | Gate Charge Total | Output Capacitance | Total Power Dissipation (PTOT) | Tjmax | Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
650 V | 120 mΩ | Gen 3 | 21 A | 26 nC | 45 pF | 86 W | 175 °C | TO-263-7 | |||||
650 V | 120 mΩ | Gen 3 | 21 A | 26 nC | 45 pF | 86 W | 175 °C | TOLL | |||||
650 V | 120 mΩ | Gen 3 | 22 A | 28 nC | 45 pF | 98 W | 175 °C | TO-247-3 | |||||
650 V | 120 mΩ | Gen 3 | 22 A | 28 nC | 45 pF | 98 W | 175 °C | TO-247-4 | |||||
650 V | 60 mΩ | Gen 3 | 29 A | 46 nC | 80 pF | 150 W | 175 °C | TO-247-3 | |||||
650 V | 60 mΩ | Gen 3 | 36 A | 46 nC | 80 pF | 136 W | 175 °C | TO-263-7 | |||||
650 V | 60 mΩ | Gen 3 | 37 A | 46 nC | 80 pF | 150 W | 175 °C | TO-247-4 | |||||
650 V | 60 mΩ | Gen 3 | 39 A | 46 nC | 72 pF | 131 W | 175 °C | TOLL | |||||
650 V | 45 mΩ | Gen 3 | 47 A | 61 nC | 101 pF | 147 W | 175 °C | TO-263-7 XL | |||||
650 V | 45 mΩ | Gen 3 | 49 A | 63 nC | 101 pF | 176 W | 175 °C | TO-247-3 | |||||
650 V | 45 mΩ | Gen 3 | 49 A | 63 nC | 101 pF | 176 W | 175 °C | TO-247-4 | |||||
650 V | 45 mΩ | Gen 3 | 49 A | 59 nC | 101 pF | 164 W | 175 °C | TOLL | |||||
650 V | 25 mΩ | Gen 3 | 77 A | 111 nC | 186 pF | 326 W | 175 °C | TOLL | |||||
650 V | 25 mΩ | Gen 3 | 80 A | 109 nC | 178 pF | 271 W | 175 °C | TO-263-7 XL | |||||
650 V | 25 mΩ | Gen 3 | 97 A | 108 nC | 178 pF | 325 W | 175 °C | TO-247-3 | |||||
650 V | 25 mΩ | Gen 3 | 97 A | 112 nC | 178 pF | 326 W | 175 °C | TO-247-4 | |||||
650 V | 15 mΩ | Gen 3 | 120 A | 188 nC | 289 pF | 416 W | 175 °C | TO-247-3 | |||||
650 V | 15 mΩ | Gen 3 | 120 A | 188 nC | 289 pF | 416 W | 175 °C | TO-247-4 |
650V Discrete Silicon Carbide Schottky Diodes for UPS
650V Discrete Silicon Carbide Schottky Diodes for UPS
650V Discrete Silicon Carbide Schottky Diodes for UPS - Filter By
650V Discrete Silicon Carbide Schottky Diodes for UPS
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | Current Rating | Generation | Forward Voltage(VF(type)) | Maximum Continuous Current (IF) | Total Capacitive Charge (QC (typ)) | Total Power Dissipation (PTOT) | Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|
650 V | 4 A | Gen 6 | 1.27 V | 4 A | 16 nC | 52 W | TO-252-2 | |||||
650 V | 4 A | Gen 6 | 1.27 V | 4 A | 16 nC | 73 W | TO-220-2 | |||||
650 V | 6 A | Gen 6 | 1.27 V | 6 A | 23 nC | 68 W | TO-252-2 | |||||
650 V | 6 A | Gen 6 | 1.27 V | 6 A | 23 nC | 73 W | TO-220-2 | |||||
650 V | 6 A | Gen 6 | 1.27 V | 6 A | 23 nC | 69 W | QFN 8x8 | |||||
650 V | 8 A | Gen 6 | 1.27 V | 8 A | 29 nC | 85 W | TO-252-2 | |||||
650 V | 8 A | Gen 6 | 1.27 V | 8 A | 29 nC | 92.6 W | TO-220-2 | |||||
650 V | 8 A | Gen 6 | 1.27 V | 8 A | 29 nC | 92 W | QFN 8x8 | |||||
650 V | 10 A | Gen 6 | 1.27 V | 10 A | 34 nC | 99 W | TO-252-2 | |||||
650 V | 10 A | Gen 6 | 1.27 V | 10 A | 35 nC | 109 W | TO-220-2 | |||||
650 V | 10 A | Gen 6 | 1.27 V | 10 A | 34 nC | 119 W | QFN 8x8 | |||||
650 V | 16 A | Gen 6 | 1.27 V | 16 A | 29 nC | 100 W | TO-247-3 | |||||
650 V | 20 A | Gen 6 | 1.27 V | 20 A | 35 nC | 116 W | TO-247-3 |
Reference Designs to Accelerate Your Time to Market
Wolfspeed not only offers the solutions to bring your design into the future of automotive technology, but our Reference Designs can help you accelerate your design cycle process. Reference Designs include full system design resource package with schematics, BOM, and more.
Featured Reference Designs for Uninterruptible Power Supplies
Featured Reference Designs for Uninterruptible Power Supplies
Featured Reference Designs for Uninterruptible Power Supplies - Filter By
Featured Reference Designs for Uninterruptible Power Supplies
Product SKU | Name | Buy Online | Type | Topology | Power | Discrete/Module | Package | Device SKU(s) | Designed By | View Product |
---|---|---|---|---|---|---|---|---|---|---|
DC to DC | LLC | 6.6kW | Discrete | TO-247-3 | Wolfspeed | |||||
DC to DC | CLLC | 22kW | Discrete | TO-247-4 | Wolfspeed | |||||
DC to AC | Three-Phase, 2-Level | 200kW | Module | XM | Wolfspeed | |||||
DC to AC | Three-Phase, 2-Level | 250kW | Module | XM | Wolfspeed | |||||
DC to AC | Three-Phase, 2-Level | 300kW | Module | XM | Wolfspeed | |||||
DC to AC | Dual Three-Phase, 2-Level | 600kW | Module | XM | Wolfspeed |
Wolfspeed: Disruptive by Design
From its inception, Wolfspeed has been focused on the future, and that silicon carbide power is the technology that can bring your business forward.
Wolfspeed has more 30 years of experience in silicon carbide power and 7+ trillion installed field hours. We have invested in the future of silicon carbide technology and are expanding our capacity thirtyfold to support your business’s growth. With more than 20 years of diode and MOSFET production, we are equipped to supply the components that enable the future of Uninterruptible Power Supplies.
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