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SiC Materials
n-Type SiC Substrates
Keeping Pace with the World's Demand for SiC Power
Industry-Leading Flexibility and Scale
With more than 30 years of SiC development and manufacturing experience, Wolfspeed produces the industry’s broadest range of SiC materials. Offering n-type conductive SiC products and a variety of SiC epitaxy options, Wolfspeed delivers the quality and quantity necessary to support the rapidly expanding demand for high-efficiency, SiC power semiconductors.
When you partner with Wolfspeed, you get the best and most innovative materials.
Materials Portfolio
Polytype
- 4H
Surface Orientation
- 4° Off-axis
Supported Diameters
- 150 mm
SiC Epitaxy
- n-type
- p-type
- Thick epitaxy
n-Type SiC Substrate Product Descriptions
The Materials Business Unit produces a wide assortment of n-type conductive SiC products ranging in wafer diameters up to 150mm. Wolfspeed's industry-leading, high-volume platform process provides our customers with the highest degree of material quality, supply assurance and economies of scale.
Part Number | Description |
|---|---|
W4NRG4C-C1-U200 | 4H-SiC, n-type, Research Grade, 150mm, 4° Off-Axis, 0.015-0.028 Ω-cm, Ultra Low MPD ≤1/cm2, 350um Thick w/ 47.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate |
W4NPG4C-C1-U200 | 4H-SiC, n-type, Production Grade, 150mm, 4° Off-Axis, 0.015-0.028 Ω-cm, Ultra Low MPD ≤1/cm2, 350um Thick w/ 47.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate |
W4NPG4C-C1-B200 | 4H-SiC, n-type, Production Grade, 150mm, 4° Off-Axis, 0.015-0.028 Ω-cm, Ultra Low MPD ≤1/cm2, Low BPD ≤1500/cm2, 350um Thick w/ 47.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate |
*150mm LBPD substrates available upon request, lead times dependent on volume and requirements
Dimensional Properties, Terminology and Measurements
Flat Length | Linear dimension of the flat measured with automated optical micrometer. |
Primary Flat | The flat of the longest length on the wafer, oriented such that the chord is parallel with a specified low-index crystal plane. |
Primary Flat Orientation | The primary flat is the (1100) plane with the flat face parallel to the [1120] direction. |
Secondary Flat | Not applicable to 150 mm wafers. |
Marking | For silicon face polished material, the carbon face of each individual wafer is laser-marked with OCR-compatible font, similar to the definitions and characteristics in SEMI M12. The laser markings are offset right when looking at the carbon face with the primary flat oriented down. |
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