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    • Discrete Silicon Carbide MOSFETs
    • 650 V Discrete Silicon Carbide MOSFETs

    650 V Discrete Silicon Carbide MOSFETs

    The industry's lowest on-state resistances and switching losses for maximum efficiency and power density

    Wolfspeed extends its silicon carbide (SiC) technology leadership with the introduction of 3rd-Generation 650 V MOSFETs, enabling smaller, lighter, and highly-efficient power conversion in an even wider range of power systems. The 650 V MOSFET product family is ideal for applications including high performance industrial power supplies, server/telecom power, electric vehicle charging systems, energy storage systems, uninterruptible power supplies, battery management systems, and other applications.

    Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
    Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
    Front and back views of Wolfspeed's 650 V TOLL MOSFET
    Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
    Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
    Front and back views of Wolfspeed's 650 V TOLL MOSFET
    Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
    Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
    Front and back views of Wolfspeed's 650 V TOLL MOSFET
    • Overview
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    C3M0015065D

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    Active
    650 V
    15 mΩ
    120 A
    175 °C
    TO-247-3
    Industrial
    Gen 3
    C3M
    C3M0015065K

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    650 V
    15 mΩ
    120 A
    175 °C
    TO-247-4
    Industrial
    Gen 3
    C3M
    C4MV015065T
    New

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    Active
    650 V
    15 mΩ
    150 A
    175 °C
    TOLT (TSC)
    Industrial
    Gen 4
    C4MV
    C3M0025065L

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    Active
    650 V
    25 mΩ
    77 A
    175 °C
    TOLL
    Industrial
    Gen 3
    C3M
    C3M0025065J1
    Active
    650 V
    25 mΩ
    80 A
    175 °C
    TO-263-7 XL
    Industrial
    Gen 3
    C3M
    C3M0025065D

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    Active
    650 V
    25 mΩ
    97 A
    175 °C
    TO-247-3
    Industrial
    Gen 3
    C3M
    C3M0025065K

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    Active
    650 V
    25 mΩ
    97 A
    175 °C
    TO-247-4
    Industrial
    Gen 3
    C3M
    C3M0045065J1
    Active
    650 V
    45 mΩ
    47 A
    175 °C
    TO-263-7 XL
    Industrial
    Gen 3
    C3M
    C3M0045065D

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    Active
    650 V
    45 mΩ
    49 A
    175 °C
    TO-247-3
    Industrial
    Gen 3
    C3M
    C3M0045065K

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    Active
    650 V
    45 mΩ
    49 A
    175 °C
    TO-247-4
    Industrial
    Gen 3
    C3M
    C3M0045065L
    Active
    650 V
    45 mΩ
    49 A
    175 °C
    TOLL
    Industrial
    Gen 3
    C3M
    C3M0060065D

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    Active
    650 V
    60 mΩ
    29 A
    175 °C
    TO-247-3
    Industrial
    Gen 3
    C3M
    C3M0060065J
    Active
    650 V
    60 mΩ
    36 A
    175 °C
    TO-263-7
    Industrial
    Gen 3
    C3M
    C3M0060065K

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    Active
    650 V
    60 mΩ
    37 A
    175 °C
    TO-247-4
    Industrial
    Gen 3
    C3M
    C3M0060065L
    Active
    650 V
    60 mΩ
    39 A
    175 °C
    TOLL
    Industrial
    Gen 3
    C3M
    C4MV025065T
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    Coming Soon
    650 V
    25 mΩ
    175 °C
    TOLT (TSC)
    Industrial
    Gen 4
    C4MV
    C4MV045065T
    Coming
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    Coming Soon
    650 V
    45 mΩ
    175 °C
    TOLT (TSC)
    Industrial
    Gen 4
    C4MV
    C4MV060065T
    Coming
    Soon

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    Coming Soon
    650 V
    60 mΩ
    175 °C
    TOLT (TSC)
    Industrial
    Gen 4
    C4MV

    Knowledge Center

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    Designing with Top Side Cooled (TSC) Silicon Carbide Power Devices 

    Improve thermal management and conserve power with Wolfspeed’s New TSC MOSFETs and Schottky diodes.
    Continue Reading  Technical Articles

    Reimagine Auxiliary Power Supply System Durability & Cost with Wolfspeed’s New 1700 V MOSFET Technology

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    Continue Reading  Technical Articles

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    Product Details

    Features

    • Low On-State Resistance over Temperature
    • Low Parasitic Capacitances
    • Fast Diode with ultra low reverse recovery
    • High Temperature Operation (TJ = 175°C)
    • Kelvin Source Pin
    • Industry Standard Through-Hole & SMT Packages
    • Small form factor
    • Low lead inductance
    • Low Thermal Impedance

    Benefits

    • Improves System Efficiency with lower switching and conduction losses
    • Enables high switching frequency operation
    • Improves System Level Power Density
    • Reduces System Size; Weight; and Cooling Requirements
    • Enables new hard switching topologies (Totem-Pole PFC)

    Typical Applications

    • Industrial Power Supplies
    • Server/Telecom
    • EV-Charging Systems
    • Energy Storage Systems (ESS)
    • Uninterruptible Power Supplies (UPS)
    • Battery Management Systems (BMS)

    Featured Resources

    Design Tools

    SpeedFit Design SimulatorLTspice & PLECS Models SpeedVal Kit™ Modular Evaluation Platform

    Technical Support

    Power Applications Forum

    Featured Application Notes

    PRD-08367: EV Charging Power Topologies Design Guidebook
    PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
    PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages

    Documents, Tools & Support

    • Technical & Sales Documents
    • Tools & Support
    • Compliance

    Documents

    27 Documents Available
    Document Type
    Document Name
    Last Updated
    User Guide
    PRD-02490: CRD-06600FF065N-K 6.6 kW Bi-Directional Totem-Pole PFC AC-DC and CLLC DC-DC User Guide (PDF)
    07/2023
    Application Notes
    PRD-08999: Turn-Off Gate Voltage Considerations for SiC MOSFETs (PDF)
    12/2025
    Application Notes
    PRD-09597: Introduction to Pulsed Current Safe Operating Area (PDF)
    New
    10/2025
    Application Notes
    PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages (PDF)
    02/2025
    Application Notes
    PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies (PDF)
    01/2025
    Application Notes
    PRD-08907: Mitigating EMI with SiC Solutions in Renewable Energy & Grid-Connected Power Converters (PDF)
    01/2025
    Application Notes
    PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs (PDF)
    09/2024
    Application Notes
    PRD-08710: Measuring Stray Inductance in Power Electronics Systems (PDF)
    07/2024
    Application Notes
    PRD-08367: EV Charging Power Topologies Design Guidebook (PDF)
    01/2024
    Application Notes
    PRD-03043: Measuring Switching and Conduction Losses in LTspice® Simulation Software (PDF)
    01/2024
    Application Notes
    PRD-06701: Thermal Management of Bottom-Side Cooled Surface-Mount Devices & Design Considerations (PDF)
    12/2023
    Application Notes
    PRD-08296: SiC MOSFET Short Circuit Events (PDF)
    11/2023
    Application Notes
    PRD-06933: Capacitance Ratio and Parasitic Turn-on (PDF)
    01/2023
    Application Notes
    PRD-05653: Recommended Solder Profiles for Power Products (PDF)
    09/2022
    Application Notes
    PRD-05641: Designing with Silicon Carbide in Energy Storage Applications (PDF)
    02/2022
    Application Notes
    PRD-02441: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies (PDF)
    11/2021
    Test Report
    PRD-00409: Driving Wolfspeed C3M SiC MOSFETs with Analog Devices ADuM4121 (PDF)
    01/2024
    Test Report
    PRD-02344: SiC MOSFET Short-Circuit Protection Using Skyworks™ Si828x Gate Driver (PDF)
    03/2022
    White Papers
    Designed to Last, Even in the Harshest Environments (PDF)
    New
    11/2025
    White Papers
    Enhancing System Durability with Advanced Packaging for Silicon Carbide (PDF)
    11/2025
    White Papers
    SiC Power Module Reliability: Wolfspeed’s Power Cycling and Lifetime Modeling Approach (PDF)
    New
    11/2025
    White Papers
    Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications (PDF)
    01/2025
    White Papers
    Driving Industrial E-Mobility With Silicon Carbide Semiconductors (Link)
    11/2024
    Sales Sheets & Flyers
    Wolfspeed® 650 V Silicon Carbide MOSFET In Compact TOLL (TO-LEADLESS) Package (PDF)
    10/2022
    Sales Terms
    Wolfspeed, Inc. Sales Terms and Conditions (PDF)
    04/2025
    Packing & Shipping
    Power Product Packing & Shipping Reference Guide (PDF)
    This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
    11/2025
    Product Catalog
    Power Product Line Card (PDF)
    01/2025

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