10000 V Bare Die Silicon Carbide MOSFETs
Wolfspeed's 10000 V bare die silicon carbide MOSFETs offer high reliability and ruggedness for high power applications.
The MOSFETs enable greater system efficiency and smaller, more power dense systems optimized for use in pulsed power, medium-voltage drives, solid-state transformers, smart grid/grid tie distributed generation, medium voltage UPS systems and nuclear power generation for AI data centers.
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Product SKU | Request Sample | Data Sheet | Status | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Tjmax | Generation | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Active | 10000 V | 305 mΩ | 20 A | 268 nC | 76 pF | 2.91 µC | 186 ns | 175 °C | Gen 3 | Industrial |