1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 4
Wolfspeed's family of Automotive Qualified 1200 V, Gen 4 SiC Bare Die MOSFETs
This is Wolfspeed’s 4th generation of high-performance silicon carbide MOSFET in a package less bare die format to be implemented into any custom module design. The high blocking voltage with low on-resistance, high-speed switching with low capacitance makes this MOSFET ideal for applications in automotive drivetrain and motor drives.
Parametric Data
No filters selected, showing all 4 products
Product SKU | Buy Online | Data Sheet | Status | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Tjmax | Generation | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Active | 1200 V | 9.6 mΩ | 202 A | 317 nC | 259 pF | 2184 nC | 45 ns | 185 °C | Gen 4 | Automotive | |||
Active | 1200 V | 11.6 mΩ | 166 A | 260 nC | 220 pF | 700 nC | 31 ns | 185 °C | Gen 4 | Automotive | |||
Active | 1200 V | 12.5 mΩ | 159 A | 242 nC | 206 pF | 1180 nC | 40 ns | 185 °C | Gen 4 | Automotive | |||
Active | 1200 V | 13 mΩ | 149 A | 234 nC | 210 pF | 1133 nC | 33 ns | 185 °C | Gen 4 | Automotive |